Two-dimensional Gunn devices are suitable for integrating many logic devices on an epitaxial GaAs layer grown on a semi-insulating substrate. In this paper, a planar Gunn device with two separated cathodes is proposed and the fundamental logic operations, such as the exclusive OR, the inclusive OR and the inhibitor functions, are discussed theoretically and experimentally. The domain dynamics in this planar device has been examined by the computer simulation. The regions of the reliable operations are also shown by a diagram. Our experimental results confirmed the above logic operations.
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Masamitsu MASUDA, Minoru NISHIDA, Masatoshi KIMURA, Jiro KOYAMA, "Logic Operations in a Planer Gunn Device with Two Separated Cathodes" in IEICE TRANSACTIONS on transactions,
vol. E60-E, no. 10, pp. 541-548, October 1977, doi: .
Abstract: Two-dimensional Gunn devices are suitable for integrating many logic devices on an epitaxial GaAs layer grown on a semi-insulating substrate. In this paper, a planar Gunn device with two separated cathodes is proposed and the fundamental logic operations, such as the exclusive OR, the inclusive OR and the inhibitor functions, are discussed theoretically and experimentally. The domain dynamics in this planar device has been examined by the computer simulation. The regions of the reliable operations are also shown by a diagram. Our experimental results confirmed the above logic operations.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e60-e_10_541/_p
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@ARTICLE{e60-e_10_541,
author={Masamitsu MASUDA, Minoru NISHIDA, Masatoshi KIMURA, Jiro KOYAMA, },
journal={IEICE TRANSACTIONS on transactions},
title={Logic Operations in a Planer Gunn Device with Two Separated Cathodes},
year={1977},
volume={E60-E},
number={10},
pages={541-548},
abstract={Two-dimensional Gunn devices are suitable for integrating many logic devices on an epitaxial GaAs layer grown on a semi-insulating substrate. In this paper, a planar Gunn device with two separated cathodes is proposed and the fundamental logic operations, such as the exclusive OR, the inclusive OR and the inhibitor functions, are discussed theoretically and experimentally. The domain dynamics in this planar device has been examined by the computer simulation. The regions of the reliable operations are also shown by a diagram. Our experimental results confirmed the above logic operations.},
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - Logic Operations in a Planer Gunn Device with Two Separated Cathodes
T2 - IEICE TRANSACTIONS on transactions
SP - 541
EP - 548
AU - Masamitsu MASUDA
AU - Minoru NISHIDA
AU - Masatoshi KIMURA
AU - Jiro KOYAMA
PY - 1977
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E60-E
IS - 10
JA - IEICE TRANSACTIONS on transactions
Y1 - October 1977
AB - Two-dimensional Gunn devices are suitable for integrating many logic devices on an epitaxial GaAs layer grown on a semi-insulating substrate. In this paper, a planar Gunn device with two separated cathodes is proposed and the fundamental logic operations, such as the exclusive OR, the inclusive OR and the inhibitor functions, are discussed theoretically and experimentally. The domain dynamics in this planar device has been examined by the computer simulation. The regions of the reliable operations are also shown by a diagram. Our experimental results confirmed the above logic operations.
ER -