Design theory of coupled-waveguide optical modulator/switch with pn junction is presented for a new structure with two parallel strip-loaded channel waveguides, and numerical analyses on GaAs and GaAs-AlxGa1-xAs devices at 1.06µm are carried out. It is analyzed that P/
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Kunio TADA, Hisaharu YANAGAWA, Keikichi HIROSE, "Design Theory of the Coupled-Waveguide Optical Modulator with pn Junction--Strip-Loaded Channel Waveguide Configuration--" in IEICE TRANSACTIONS on transactions,
vol. E61-E, no. 1, pp. 1-7, January 1978, doi: .
Abstract: Design theory of coupled-waveguide optical modulator/switch with pn junction is presented for a new structure with two parallel strip-loaded channel waveguides, and numerical analyses on GaAs and GaAs-AlxGa1-xAs devices at 1.06µm are carried out. It is analyzed that P/
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e61-e_1_1/_p
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@ARTICLE{e61-e_1_1,
author={Kunio TADA, Hisaharu YANAGAWA, Keikichi HIROSE, },
journal={IEICE TRANSACTIONS on transactions},
title={Design Theory of the Coupled-Waveguide Optical Modulator with pn Junction--Strip-Loaded Channel Waveguide Configuration--},
year={1978},
volume={E61-E},
number={1},
pages={1-7},
abstract={Design theory of coupled-waveguide optical modulator/switch with pn junction is presented for a new structure with two parallel strip-loaded channel waveguides, and numerical analyses on GaAs and GaAs-AlxGa1-xAs devices at 1.06µm are carried out. It is analyzed that P/
keywords={},
doi={},
ISSN={},
month={January},}
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TY - JOUR
TI - Design Theory of the Coupled-Waveguide Optical Modulator with pn Junction--Strip-Loaded Channel Waveguide Configuration--
T2 - IEICE TRANSACTIONS on transactions
SP - 1
EP - 7
AU - Kunio TADA
AU - Hisaharu YANAGAWA
AU - Keikichi HIROSE
PY - 1978
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E61-E
IS - 1
JA - IEICE TRANSACTIONS on transactions
Y1 - January 1978
AB - Design theory of coupled-waveguide optical modulator/switch with pn junction is presented for a new structure with two parallel strip-loaded channel waveguides, and numerical analyses on GaAs and GaAs-AlxGa1-xAs devices at 1.06µm are carried out. It is analyzed that P/
ER -