Noise Analysis of GaAs FETs with Negative Mobility

Yusuke TAJIMA; Kiyoyasu SHIBATA

Noise Analysis of GaAs FETs with Negative Mobility

Yusuke TAJIMA, Kiyoyasu SHIBATA

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Field effect transistors in the high frequency region are most often made of GaAs which presents negative mobility. Electrons carried in the active channel of a device cannot escape the effect of the negative mobility. In this paper, the noise in FETs made of materials with negative mobility is studied. The effects of negative mobility can be summarized as follows. 1) It increases induced charge in the channel; 2) increases stationary carries, promoting the formation of noise dipoles and 3) amplifies the size of the noise dipoles as they travel along the channel. These effects will increase the values of equivalent noise conductances. At the same time, the correlation coefficient between the gate and drain noise currents peaks near pinch off, thus resulting in a low noise figure minimum. Calculations are supported by reported results. In the calculations, the effect of extending the depletion layer at the drain end of the gate is also considered in an attempt to attain more accurate values of signal parameters as well as of noise parameters.

Publication: IEICE TRANSACTIONS on transactions Vol.E61-E No.8 pp.585-592

Publication Date: 1978/08/25

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Type of Manuscript: PAPER

Category: Semiconductors

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Yusuke TAJIMA
Kiyoyasu SHIBATA

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Yusuke TAJIMA, Kiyoyasu SHIBATA, "Noise Analysis of GaAs FETs with Negative Mobility" in IEICE TRANSACTIONS on transactions, vol. E61-E, no. 8, pp. 585-592, August 1978, doi: .
Abstract: Field effect transistors in the high frequency region are most often made of GaAs which presents negative mobility. Electrons carried in the active channel of a device cannot escape the effect of the negative mobility. In this paper, the noise in FETs made of materials with negative mobility is studied. The effects of negative mobility can be summarized as follows. 1) It increases induced charge in the channel; 2) increases stationary carries, promoting the formation of noise dipoles and 3) amplifies the size of the noise dipoles as they travel along the channel. These effects will increase the values of equivalent noise conductances. At the same time, the correlation coefficient between the gate and drain noise currents peaks near pinch off, thus resulting in a low noise figure minimum. Calculations are supported by reported results. In the calculations, the effect of extending the depletion layer at the drain end of the gate is also considered in an attempt to attain more accurate values of signal parameters as well as of noise parameters.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e61-e_8_585/_p

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@ARTICLE{e61-e_8_585,
author={Yusuke TAJIMA, Kiyoyasu SHIBATA, },
journal={IEICE TRANSACTIONS on transactions},
title={Noise Analysis of GaAs FETs with Negative Mobility},
year={1978},
volume={E61-E},
number={8},
pages={585-592},
abstract={Field effect transistors in the high frequency region are most often made of GaAs which presents negative mobility. Electrons carried in the active channel of a device cannot escape the effect of the negative mobility. In this paper, the noise in FETs made of materials with negative mobility is studied. The effects of negative mobility can be summarized as follows. 1) It increases induced charge in the channel; 2) increases stationary carries, promoting the formation of noise dipoles and 3) amplifies the size of the noise dipoles as they travel along the channel. These effects will increase the values of equivalent noise conductances. At the same time, the correlation coefficient between the gate and drain noise currents peaks near pinch off, thus resulting in a low noise figure minimum. Calculations are supported by reported results. In the calculations, the effect of extending the depletion layer at the drain end of the gate is also considered in an attempt to attain more accurate values of signal parameters as well as of noise parameters.},
keywords={},
doi={},
ISSN={},
month={August},}

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TY - JOUR
TI - Noise Analysis of GaAs FETs with Negative Mobility
T2 - IEICE TRANSACTIONS on transactions
SP - 585
EP - 592
AU - Yusuke TAJIMA
AU - Kiyoyasu SHIBATA
PY - 1978
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E61-E
IS - 8
JA - IEICE TRANSACTIONS on transactions
Y1 - August 1978
AB - Field effect transistors in the high frequency region are most often made of GaAs which presents negative mobility. Electrons carried in the active channel of a device cannot escape the effect of the negative mobility. In this paper, the noise in FETs made of materials with negative mobility is studied. The effects of negative mobility can be summarized as follows. 1) It increases induced charge in the channel; 2) increases stationary carries, promoting the formation of noise dipoles and 3) amplifies the size of the noise dipoles as they travel along the channel. These effects will increase the values of equivalent noise conductances. At the same time, the correlation coefficient between the gate and drain noise currents peaks near pinch off, thus resulting in a low noise figure minimum. Calculations are supported by reported results. In the calculations, the effect of extending the depletion layer at the drain end of the gate is also considered in an attempt to attain more accurate values of signal parameters as well as of noise parameters.
ER -