Josephson Junctions with Tellurium Barriers

Koichi NAGATA; Shingo UEHARA; Takahiro INAMURA

Josephson Junctions with Tellurium Barriers

Koichi NAGATA, Shingo UEHARA, Takahiro INAMURA

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Josephson junctions with semiconductor Te barriers have been studied. First, the junctions were fabricated with the process including oxidation of the evaporated Te film surface. The process was generally employed to avoid shorts through pinholes in Te film. Intensive studies on the influence of the Te barrier thickness and oxidation conditions on the junction characteristic parameters were made. The Te layer acts not only as the barrier for tunneling, that is the normal tunneling resistance shows exponential dependence on the Te layer thickness, but also induces proximity effect at the metal interface. The effect was found to play an important role in the junction performance. It was also found that, in the oxidation process, Te itself is oxidized and the junction performance is largely influenced by the Te oxide layer existance. In the second step, junctions free from oxide layer, which showed Josephson effect up to the Te barrier thickness of 40 nm, have been fabricated. By employing smooth surfaced Nb bottom electrode as well as the photolithographic technique comprising the trimming process, uniform junctions perfectly free from pinhole shorts have been realized.

Publication: IEICE TRANSACTIONS on transactions Vol.E62-E No.12 pp.863-868

Publication Date: 1979/12/25

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Type of Manuscript: PAPER

Category: Other Devices

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Koichi NAGATA
Shingo UEHARA
Takahiro INAMURA

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Koichi NAGATA, Shingo UEHARA, Takahiro INAMURA, "Josephson Junctions with Tellurium Barriers" in IEICE TRANSACTIONS on transactions, vol. E62-E, no. 12, pp. 863-868, December 1979, doi: .
Abstract: Josephson junctions with semiconductor Te barriers have been studied. First, the junctions were fabricated with the process including oxidation of the evaporated Te film surface. The process was generally employed to avoid shorts through pinholes in Te film. Intensive studies on the influence of the Te barrier thickness and oxidation conditions on the junction characteristic parameters were made. The Te layer acts not only as the barrier for tunneling, that is the normal tunneling resistance shows exponential dependence on the Te layer thickness, but also induces proximity effect at the metal interface. The effect was found to play an important role in the junction performance. It was also found that, in the oxidation process, Te itself is oxidized and the junction performance is largely influenced by the Te oxide layer existance. In the second step, junctions free from oxide layer, which showed Josephson effect up to the Te barrier thickness of 40 nm, have been fabricated. By employing smooth surfaced Nb bottom electrode as well as the photolithographic technique comprising the trimming process, uniform junctions perfectly free from pinhole shorts have been realized.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e62-e_12_863/_p

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@ARTICLE{e62-e_12_863,
author={Koichi NAGATA, Shingo UEHARA, Takahiro INAMURA, },
journal={IEICE TRANSACTIONS on transactions},
title={Josephson Junctions with Tellurium Barriers},
year={1979},
volume={E62-E},
number={12},
pages={863-868},
abstract={Josephson junctions with semiconductor Te barriers have been studied. First, the junctions were fabricated with the process including oxidation of the evaporated Te film surface. The process was generally employed to avoid shorts through pinholes in Te film. Intensive studies on the influence of the Te barrier thickness and oxidation conditions on the junction characteristic parameters were made. The Te layer acts not only as the barrier for tunneling, that is the normal tunneling resistance shows exponential dependence on the Te layer thickness, but also induces proximity effect at the metal interface. The effect was found to play an important role in the junction performance. It was also found that, in the oxidation process, Te itself is oxidized and the junction performance is largely influenced by the Te oxide layer existance. In the second step, junctions free from oxide layer, which showed Josephson effect up to the Te barrier thickness of 40 nm, have been fabricated. By employing smooth surfaced Nb bottom electrode as well as the photolithographic technique comprising the trimming process, uniform junctions perfectly free from pinhole shorts have been realized.},
keywords={},
doi={},
ISSN={},
month={December},}

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TY - JOUR
TI - Josephson Junctions with Tellurium Barriers
T2 - IEICE TRANSACTIONS on transactions
SP - 863
EP - 868
AU - Koichi NAGATA
AU - Shingo UEHARA
AU - Takahiro INAMURA
PY - 1979
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E62-E
IS - 12
JA - IEICE TRANSACTIONS on transactions
Y1 - December 1979
AB - Josephson junctions with semiconductor Te barriers have been studied. First, the junctions were fabricated with the process including oxidation of the evaporated Te film surface. The process was generally employed to avoid shorts through pinholes in Te film. Intensive studies on the influence of the Te barrier thickness and oxidation conditions on the junction characteristic parameters were made. The Te layer acts not only as the barrier for tunneling, that is the normal tunneling resistance shows exponential dependence on the Te layer thickness, but also induces proximity effect at the metal interface. The effect was found to play an important role in the junction performance. It was also found that, in the oxidation process, Te itself is oxidized and the junction performance is largely influenced by the Te oxide layer existance. In the second step, junctions free from oxide layer, which showed Josephson effect up to the Te barrier thickness of 40 nm, have been fabricated. By employing smooth surfaced Nb bottom electrode as well as the photolithographic technique comprising the trimming process, uniform junctions perfectly free from pinhole shorts have been realized.
ER -