The stationary characteristics of gain-guiding semiconductor lasers with a symmetrical structure are theoretically examined, solving the wave equation by the Galerkins method and taking the effect of transverse carrier diffusion into consideration. For wide stripe lasers, the carrier density distribution becomes flat with the increase of the current density. And with the more increase of the current density, a hole-burning, a mode deformation and a
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Kouichi SEKI, Takeshi KAMIYA, Hisayoshi YANAI, "Analysis of Gain-Guiding DH Semiconductor Lasers--Effects of Transverse Carrier Diffusion--" in IEICE TRANSACTIONS on transactions,
vol. E62-E, no. 2, pp. 73-80, February 1979, doi: .
Abstract: The stationary characteristics of gain-guiding semiconductor lasers with a symmetrical structure are theoretically examined, solving the wave equation by the Galerkins method and taking the effect of transverse carrier diffusion into consideration. For wide stripe lasers, the carrier density distribution becomes flat with the increase of the current density. And with the more increase of the current density, a hole-burning, a mode deformation and a
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e62-e_2_73/_p
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@ARTICLE{e62-e_2_73,
author={Kouichi SEKI, Takeshi KAMIYA, Hisayoshi YANAI, },
journal={IEICE TRANSACTIONS on transactions},
title={Analysis of Gain-Guiding DH Semiconductor Lasers--Effects of Transverse Carrier Diffusion--},
year={1979},
volume={E62-E},
number={2},
pages={73-80},
abstract={The stationary characteristics of gain-guiding semiconductor lasers with a symmetrical structure are theoretically examined, solving the wave equation by the Galerkins method and taking the effect of transverse carrier diffusion into consideration. For wide stripe lasers, the carrier density distribution becomes flat with the increase of the current density. And with the more increase of the current density, a hole-burning, a mode deformation and a
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - Analysis of Gain-Guiding DH Semiconductor Lasers--Effects of Transverse Carrier Diffusion--
T2 - IEICE TRANSACTIONS on transactions
SP - 73
EP - 80
AU - Kouichi SEKI
AU - Takeshi KAMIYA
AU - Hisayoshi YANAI
PY - 1979
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E62-E
IS - 2
JA - IEICE TRANSACTIONS on transactions
Y1 - February 1979
AB - The stationary characteristics of gain-guiding semiconductor lasers with a symmetrical structure are theoretically examined, solving the wave equation by the Galerkins method and taking the effect of transverse carrier diffusion into consideration. For wide stripe lasers, the carrier density distribution becomes flat with the increase of the current density. And with the more increase of the current density, a hole-burning, a mode deformation and a
ER -