MOS Integrated-Circuits with Ion-Implanted Polysilicon Resistor Load

Takashi OHZONE; Takashi HIRAO; Shiro HORIUCHI; Hideo HOZUMI

MOS Integrated-Circuits with Ion-Implanted Polysilicon Resistor Load

Takashi OHZONE, Takashi HIRAO, Shiro HORIUCHI, Hideo HOZUMI

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The features of n-channel polysilicon-gate MOS integrated circuits with ion-implanted polysilicon resistor load are described. A ring-oscillator circuit and a divider circuit are used for the performance evaluations. Switching delay time of 1.0 ns and power-delay product as small as 0.1 pJ are obtained at 2V supply voltage for the ring-oscillator. In a divider circuit, input frequency up to 80 MHz can be divided at 2V. The electrical characteristics can be varied by changing sheet resistance of the load resistors, while the power-delay product are nearly constant. Based on the experimental results, electrical characteristics of resistor load MOS circuits using the scaled-down MOS FET's are discussed.

Publication: IEICE TRANSACTIONS on transactions Vol.E63-E No.11 pp.803-806

Publication Date: 1980/11/25

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Type of Manuscript: PAPER

Category: Integrated Circuits

Authors

Takashi OHZONE
Takashi HIRAO
Shiro HORIUCHI
Hideo HOZUMI

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Takashi OHZONE, Takashi HIRAO, Shiro HORIUCHI, Hideo HOZUMI, "MOS Integrated-Circuits with Ion-Implanted Polysilicon Resistor Load" in IEICE TRANSACTIONS on transactions, vol. E63-E, no. 11, pp. 803-806, November 1980, doi: .
Abstract: The features of n-channel polysilicon-gate MOS integrated circuits with ion-implanted polysilicon resistor load are described. A ring-oscillator circuit and a divider circuit are used for the performance evaluations. Switching delay time of 1.0 ns and power-delay product as small as 0.1 pJ are obtained at 2V supply voltage for the ring-oscillator. In a divider circuit, input frequency up to 80 MHz can be divided at 2V. The electrical characteristics can be varied by changing sheet resistance of the load resistors, while the power-delay product are nearly constant. Based on the experimental results, electrical characteristics of resistor load MOS circuits using the scaled-down MOS FET's are discussed.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e63-e_11_803/_p

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@ARTICLE{e63-e_11_803,
author={Takashi OHZONE, Takashi HIRAO, Shiro HORIUCHI, Hideo HOZUMI, },
journal={IEICE TRANSACTIONS on transactions},
title={MOS Integrated-Circuits with Ion-Implanted Polysilicon Resistor Load},
year={1980},
volume={E63-E},
number={11},
pages={803-806},
abstract={The features of n-channel polysilicon-gate MOS integrated circuits with ion-implanted polysilicon resistor load are described. A ring-oscillator circuit and a divider circuit are used for the performance evaluations. Switching delay time of 1.0 ns and power-delay product as small as 0.1 pJ are obtained at 2V supply voltage for the ring-oscillator. In a divider circuit, input frequency up to 80 MHz can be divided at 2V. The electrical characteristics can be varied by changing sheet resistance of the load resistors, while the power-delay product are nearly constant. Based on the experimental results, electrical characteristics of resistor load MOS circuits using the scaled-down MOS FET's are discussed.},
keywords={},
doi={},
ISSN={},
month={November},}

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TY - JOUR
TI - MOS Integrated-Circuits with Ion-Implanted Polysilicon Resistor Load
T2 - IEICE TRANSACTIONS on transactions
SP - 803
EP - 806
AU - Takashi OHZONE
AU - Takashi HIRAO
AU - Shiro HORIUCHI
AU - Hideo HOZUMI
PY - 1980
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E63-E
IS - 11
JA - IEICE TRANSACTIONS on transactions
Y1 - November 1980
AB - The features of n-channel polysilicon-gate MOS integrated circuits with ion-implanted polysilicon resistor load are described. A ring-oscillator circuit and a divider circuit are used for the performance evaluations. Switching delay time of 1.0 ns and power-delay product as small as 0.1 pJ are obtained at 2V supply voltage for the ring-oscillator. In a divider circuit, input frequency up to 80 MHz can be divided at 2V. The electrical characteristics can be varied by changing sheet resistance of the load resistors, while the power-delay product are nearly constant. Based on the experimental results, electrical characteristics of resistor load MOS circuits using the scaled-down MOS FET's are discussed.
ER -