Making good use of low impedance and short wavelength characteristics of high dielectric substrate whose dielectric constant (εr) is 39 to 139, and advanced microwave integrated circuit (MIC) technology has been proposed to realize low-cost highly-reliable and small size UHF power amplifiers. Numerical calculation of single and parallel-coupled microstrip parameters on the high-dielectric constant substrate has been presented at first. Then the thick film technique application possibilities are discussed for high-dielectric substrate MICs, which is more suited for low price and mass production than conventional thin film technique. Based on theoretical and experimental estimation results, an amplifier with εr
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copy
Tsutomu NOGUCHI, Yuji KAJIWARA, Tadahiko SUGIURA, Hidehiko KATOH, Hideo TAKAMIZAWA, "Microwave Integrated Circuits with High-Dielectric Constant Substrate for UHF Transistor Amplifiers" in IEICE TRANSACTIONS on transactions,
vol. E63-E, no. 12, pp. 842-848, December 1980, doi: .
Abstract: Making good use of low impedance and short wavelength characteristics of high dielectric substrate whose dielectric constant (εr) is 39 to 139, and advanced microwave integrated circuit (MIC) technology has been proposed to realize low-cost highly-reliable and small size UHF power amplifiers. Numerical calculation of single and parallel-coupled microstrip parameters on the high-dielectric constant substrate has been presented at first. Then the thick film technique application possibilities are discussed for high-dielectric substrate MICs, which is more suited for low price and mass production than conventional thin film technique. Based on theoretical and experimental estimation results, an amplifier with εr
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e63-e_12_842/_p
Copy
@ARTICLE{e63-e_12_842,
author={Tsutomu NOGUCHI, Yuji KAJIWARA, Tadahiko SUGIURA, Hidehiko KATOH, Hideo TAKAMIZAWA, },
journal={IEICE TRANSACTIONS on transactions},
title={Microwave Integrated Circuits with High-Dielectric Constant Substrate for UHF Transistor Amplifiers},
year={1980},
volume={E63-E},
number={12},
pages={842-848},
abstract={Making good use of low impedance and short wavelength characteristics of high dielectric substrate whose dielectric constant (εr) is 39 to 139, and advanced microwave integrated circuit (MIC) technology has been proposed to realize low-cost highly-reliable and small size UHF power amplifiers. Numerical calculation of single and parallel-coupled microstrip parameters on the high-dielectric constant substrate has been presented at first. Then the thick film technique application possibilities are discussed for high-dielectric substrate MICs, which is more suited for low price and mass production than conventional thin film technique. Based on theoretical and experimental estimation results, an amplifier with εr
keywords={},
doi={},
ISSN={},
month={December},}
Copy
TY - JOUR
TI - Microwave Integrated Circuits with High-Dielectric Constant Substrate for UHF Transistor Amplifiers
T2 - IEICE TRANSACTIONS on transactions
SP - 842
EP - 848
AU - Tsutomu NOGUCHI
AU - Yuji KAJIWARA
AU - Tadahiko SUGIURA
AU - Hidehiko KATOH
AU - Hideo TAKAMIZAWA
PY - 1980
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E63-E
IS - 12
JA - IEICE TRANSACTIONS on transactions
Y1 - December 1980
AB - Making good use of low impedance and short wavelength characteristics of high dielectric substrate whose dielectric constant (εr) is 39 to 139, and advanced microwave integrated circuit (MIC) technology has been proposed to realize low-cost highly-reliable and small size UHF power amplifiers. Numerical calculation of single and parallel-coupled microstrip parameters on the high-dielectric constant substrate has been presented at first. Then the thick film technique application possibilities are discussed for high-dielectric substrate MICs, which is more suited for low price and mass production than conventional thin film technique. Based on theoretical and experimental estimation results, an amplifier with εr
ER -