Double Boron-Ion Implanted Short Channel MOS FET for High Speed Static RAMs

Kazuo TERADA

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Kazuo TERADA, "Double Boron-Ion Implanted Short Channel MOS FET for High Speed Static RAMs" in IEICE TRANSACTIONS on transactions, vol. E63-E, no. 8, pp. 567-573, August 1980, doi: .
Abstract: A short channel MOS FET with 1-1.5 µm channel and double boron-ion implantation has been designed as a high speed static RAM element. High speed properties and short channel effects are compared among the MOS FETs with 1.5-100 Ωcm substrate and several deep/shallow implant dose combinations. It is found that 40 Ωcm substrate or so with 4/45/310¹¹ cm² deep/shallow implant dose combination is most desirable.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e63-e_8_567/_p

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@ARTICLE{e63-e_8_567,
author={Kazuo TERADA, },
journal={IEICE TRANSACTIONS on transactions},
title={Double Boron-Ion Implanted Short Channel MOS FET for High Speed Static RAMs},
year={1980},
volume={E63-E},
number={8},
pages={567-573},
abstract={A short channel MOS FET with 1-1.5 µm channel and double boron-ion implantation has been designed as a high speed static RAM element. High speed properties and short channel effects are compared among the MOS FETs with 1.5-100 Ωcm substrate and several deep/shallow implant dose combinations. It is found that 40 Ωcm substrate or so with 4/45/310¹¹ cm² deep/shallow implant dose combination is most desirable.},
keywords={},
doi={},
ISSN={},
month={August},}

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TY - JOUR
TI - Double Boron-Ion Implanted Short Channel MOS FET for High Speed Static RAMs
T2 - IEICE TRANSACTIONS on transactions
SP - 567
EP - 573
AU - Kazuo TERADA
PY - 1980
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E63-E
IS - 8
JA - IEICE TRANSACTIONS on transactions
Y1 - August 1980
AB - A short channel MOS FET with 1-1.5 µm channel and double boron-ion implantation has been designed as a high speed static RAM element. High speed properties and short channel effects are compared among the MOS FETs with 1.5-100 Ωcm substrate and several deep/shallow implant dose combinations. It is found that 40 Ωcm substrate or so with 4/45/310¹¹ cm² deep/shallow implant dose combination is most desirable.
ER -