Improved Structure of CdS Monolithic SAW Convolver with High Photoenhancement
Summary :
The improved photoenhancement of the SAW convolution effect in monolithic convolvers with high-resistivity surface layer has been discussed. CdS monolithic convolvers with one or a half acoustical wavelength thick high-resistivity layer formed on semiconductive substrate are prepared in order to check the expected behavior. Due to much reduction of the acoustoelectric loss of SAW, the convolver with a half acoustical wavelength thick high-resistivity layer shows a remarkable photoenhancement, 20 times the value in the dark, when photocarriers are generated uniformly in the high-resistivity layer. Nonlinear capacitance mechanism can also induce photoenhancement of the convolution effect. It is first found that further enhancement of the convolution can be achieved by applying positive pulsed bias to the gate electrode under illumination of a light with high absorption coefficient.
- Publication
- IEICE TRANSACTIONS on transactions Vol.E63-E No.9 pp.655-661
- Publication Date
- 1980/09/25
- Publicized
- Online ISSN
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- Type of Manuscript
- PAPER
- Category
- Electron Devices
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Zen'ichi UEDA, Junji SHIRAFUJI, Yoshio INUISHI, "Improved Structure of CdS Monolithic SAW Convolver with High Photoenhancement" in IEICE TRANSACTIONS on transactions,
vol. E63-E, no. 9, pp. 655-661, September 1980, doi: .
Abstract: The improved photoenhancement of the SAW convolution effect in monolithic convolvers with high-resistivity surface layer has been discussed. CdS monolithic convolvers with one or a half acoustical wavelength thick high-resistivity layer formed on semiconductive substrate are prepared in order to check the expected behavior. Due to much reduction of the acoustoelectric loss of SAW, the convolver with a half acoustical wavelength thick high-resistivity layer shows a remarkable photoenhancement, 20 times the value in the dark, when photocarriers are generated uniformly in the high-resistivity layer. Nonlinear capacitance mechanism can also induce photoenhancement of the convolution effect. It is first found that further enhancement of the convolution can be achieved by applying positive pulsed bias to the gate electrode under illumination of a light with high absorption coefficient.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e63-e_9_655/_p
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@ARTICLE{e63-e_9_655,
author={Zen'ichi UEDA, Junji SHIRAFUJI, Yoshio INUISHI, },
journal={IEICE TRANSACTIONS on transactions},
title={Improved Structure of CdS Monolithic SAW Convolver with High Photoenhancement},
year={1980},
volume={E63-E},
number={9},
pages={655-661},
abstract={The improved photoenhancement of the SAW convolution effect in monolithic convolvers with high-resistivity surface layer has been discussed. CdS monolithic convolvers with one or a half acoustical wavelength thick high-resistivity layer formed on semiconductive substrate are prepared in order to check the expected behavior. Due to much reduction of the acoustoelectric loss of SAW, the convolver with a half acoustical wavelength thick high-resistivity layer shows a remarkable photoenhancement, 20 times the value in the dark, when photocarriers are generated uniformly in the high-resistivity layer. Nonlinear capacitance mechanism can also induce photoenhancement of the convolution effect. It is first found that further enhancement of the convolution can be achieved by applying positive pulsed bias to the gate electrode under illumination of a light with high absorption coefficient.},
keywords={},
doi={},
ISSN={},
month={September},}
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TY - JOUR
TI - Improved Structure of CdS Monolithic SAW Convolver with High Photoenhancement
T2 - IEICE TRANSACTIONS on transactions
SP - 655
EP - 661
AU - Zen'ichi UEDA
AU - Junji SHIRAFUJI
AU - Yoshio INUISHI
PY - 1980
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E63-E
IS - 9
JA - IEICE TRANSACTIONS on transactions
Y1 - September 1980
AB - The improved photoenhancement of the SAW convolution effect in monolithic convolvers with high-resistivity surface layer has been discussed. CdS monolithic convolvers with one or a half acoustical wavelength thick high-resistivity layer formed on semiconductive substrate are prepared in order to check the expected behavior. Due to much reduction of the acoustoelectric loss of SAW, the convolver with a half acoustical wavelength thick high-resistivity layer shows a remarkable photoenhancement, 20 times the value in the dark, when photocarriers are generated uniformly in the high-resistivity layer. Nonlinear capacitance mechanism can also induce photoenhancement of the convolution effect. It is first found that further enhancement of the convolution can be achieved by applying positive pulsed bias to the gate electrode under illumination of a light with high absorption coefficient.
ER -
English
