Experimental Investigation of Dependence of GaAs Power MESFET Performance on Device Parameters

Asamitsu HIGASHISAKA

Experimental Investigation of Dependence of GaAs Power MESFET Performance on Device Parameters

Asamitsu HIGASHISAKA

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Dependence of GaAs power MESFET performance on the device parameters was experimentally investigated. Power gain and output power were most sensitive to the gate length, giving the degradation rates due to increase of the gate length of 1.7 dB/µm for the power gain and 0.67 dB/µm for the output power. The effect of the gate finger width on the microwave performance was not serious and the performance deterioration at 8 GHz did not begin until the gate finger width of 200 µm. Temperature dependence of the microwave performance of GaAs power MESFET, as well as the dependence of the thermal resistance on the device geometric parameters, was investigated quantitatively. Power gain degraded with increase of the device temperature with the rate of 0.026 dB/.

Publication: IEICE TRANSACTIONS on transactions Vol.E64-E No.2 pp.65-70

Publication Date: 1981/02/25

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Type of Manuscript: PAPER

Category: Electron Devices

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Asamitsu HIGASHISAKA

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Asamitsu HIGASHISAKA, "Experimental Investigation of Dependence of GaAs Power MESFET Performance on Device Parameters" in IEICE TRANSACTIONS on transactions, vol. E64-E, no. 2, pp. 65-70, February 1981, doi: .
Abstract: Dependence of GaAs power MESFET performance on the device parameters was experimentally investigated. Power gain and output power were most sensitive to the gate length, giving the degradation rates due to increase of the gate length of 1.7 dB/µm for the power gain and 0.67 dB/µm for the output power. The effect of the gate finger width on the microwave performance was not serious and the performance deterioration at 8 GHz did not begin until the gate finger width of 200 µm. Temperature dependence of the microwave performance of GaAs power MESFET, as well as the dependence of the thermal resistance on the device geometric parameters, was investigated quantitatively. Power gain degraded with increase of the device temperature with the rate of 0.026 dB/.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e64-e_2_65/_p

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@ARTICLE{e64-e_2_65,
author={Asamitsu HIGASHISAKA, },
journal={IEICE TRANSACTIONS on transactions},
title={Experimental Investigation of Dependence of GaAs Power MESFET Performance on Device Parameters},
year={1981},
volume={E64-E},
number={2},
pages={65-70},
abstract={Dependence of GaAs power MESFET performance on the device parameters was experimentally investigated. Power gain and output power were most sensitive to the gate length, giving the degradation rates due to increase of the gate length of 1.7 dB/µm for the power gain and 0.67 dB/µm for the output power. The effect of the gate finger width on the microwave performance was not serious and the performance deterioration at 8 GHz did not begin until the gate finger width of 200 µm. Temperature dependence of the microwave performance of GaAs power MESFET, as well as the dependence of the thermal resistance on the device geometric parameters, was investigated quantitatively. Power gain degraded with increase of the device temperature with the rate of 0.026 dB/.},
keywords={},
doi={},
ISSN={},
month={February},}

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TY - JOUR
TI - Experimental Investigation of Dependence of GaAs Power MESFET Performance on Device Parameters
T2 - IEICE TRANSACTIONS on transactions
SP - 65
EP - 70
AU - Asamitsu HIGASHISAKA
PY - 1981
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E64-E
IS - 2
JA - IEICE TRANSACTIONS on transactions
Y1 - February 1981
AB - Dependence of GaAs power MESFET performance on the device parameters was experimentally investigated. Power gain and output power were most sensitive to the gate length, giving the degradation rates due to increase of the gate length of 1.7 dB/µm for the power gain and 0.67 dB/µm for the output power. The effect of the gate finger width on the microwave performance was not serious and the performance deterioration at 8 GHz did not begin until the gate finger width of 200 µm. Temperature dependence of the microwave performance of GaAs power MESFET, as well as the dependence of the thermal resistance on the device geometric parameters, was investigated quantitatively. Power gain degraded with increase of the device temperature with the rate of 0.026 dB/.
ER -