Some Consideration on Calculation of the Localized State Distribution in GD a-Si

Takaaki NODA; Yoshihiko OGAWA; Teiichi KUROBE

Some Consideration on Calculation of the Localized State Distribution in GD a-Si

Takaaki NODA, Yoshihiko OGAWA, Teiichi KUROBE

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The reliability of the FE method and the CV method for determining the localized state distribution N(E) in GD a-Si are evaluated by computer simulation. It is shown that calculation by the CV method is almost exact and the FE method is less reliable. But the FE method may be more reliable than the CV method about the accuracy of measured values. The new calculation method combining both methods and the iteration method are suggested for obtaining almost true distribution N(E). And the effect of surface states on calculation of N(E) is evaluated; the allowable surface state density is shown to be below 10¹¹cm^-2eV^-1. The effect of the Fermi-Dirac distribution function F(E) at room temperature is estimated. The results indicate that correction by room temperature F(E) is necessary.

Publication: IEICE TRANSACTIONS on transactions Vol.E64-E No.3 pp.134-140

Publication Date: 1981/03/25

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Type of Manuscript: PAPER

Category: Semiconductors

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Takaaki NODA
Yoshihiko OGAWA
Teiichi KUROBE

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Takaaki NODA, Yoshihiko OGAWA, Teiichi KUROBE, "Some Consideration on Calculation of the Localized State Distribution in GD a-Si" in IEICE TRANSACTIONS on transactions, vol. E64-E, no. 3, pp. 134-140, March 1981, doi: .
Abstract: The reliability of the FE method and the CV method for determining the localized state distribution N(E) in GD a-Si are evaluated by computer simulation. It is shown that calculation by the CV method is almost exact and the FE method is less reliable. But the FE method may be more reliable than the CV method about the accuracy of measured values. The new calculation method combining both methods and the iteration method are suggested for obtaining almost true distribution N(E). And the effect of surface states on calculation of N(E) is evaluated; the allowable surface state density is shown to be below 10¹¹cm^-2eV^-1. The effect of the Fermi-Dirac distribution function F(E) at room temperature is estimated. The results indicate that correction by room temperature F(E) is necessary.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e64-e_3_134/_p

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@ARTICLE{e64-e_3_134,
author={Takaaki NODA, Yoshihiko OGAWA, Teiichi KUROBE, },
journal={IEICE TRANSACTIONS on transactions},
title={Some Consideration on Calculation of the Localized State Distribution in GD a-Si},
year={1981},
volume={E64-E},
number={3},
pages={134-140},
abstract={The reliability of the FE method and the CV method for determining the localized state distribution N(E) in GD a-Si are evaluated by computer simulation. It is shown that calculation by the CV method is almost exact and the FE method is less reliable. But the FE method may be more reliable than the CV method about the accuracy of measured values. The new calculation method combining both methods and the iteration method are suggested for obtaining almost true distribution N(E). And the effect of surface states on calculation of N(E) is evaluated; the allowable surface state density is shown to be below 10¹¹cm^-2eV^-1. The effect of the Fermi-Dirac distribution function F(E) at room temperature is estimated. The results indicate that correction by room temperature F(E) is necessary.},
keywords={},
doi={},
ISSN={},
month={March},}

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TY - JOUR
TI - Some Consideration on Calculation of the Localized State Distribution in GD a-Si
T2 - IEICE TRANSACTIONS on transactions
SP - 134
EP - 140
AU - Takaaki NODA
AU - Yoshihiko OGAWA
AU - Teiichi KUROBE
PY - 1981
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E64-E
IS - 3
JA - IEICE TRANSACTIONS on transactions
Y1 - March 1981
AB - The reliability of the FE method and the CV method for determining the localized state distribution N(E) in GD a-Si are evaluated by computer simulation. It is shown that calculation by the CV method is almost exact and the FE method is less reliable. But the FE method may be more reliable than the CV method about the accuracy of measured values. The new calculation method combining both methods and the iteration method are suggested for obtaining almost true distribution N(E). And the effect of surface states on calculation of N(E) is evaluated; the allowable surface state density is shown to be below 10¹¹cm^-2eV^-1. The effect of the Fermi-Dirac distribution function F(E) at room temperature is estimated. The results indicate that correction by room temperature F(E) is necessary.
ER -