Characteristics of n+/p Silicon Solar Cells Formed by Partially Ionized MBE
Summary :
By means of partially ionized MBE (PI-MBE), n+/p silicon solar cells have been fabricated. The surface layer epitaxially grown on a p-type bulk silicon substrate (ps
- Publication
- IEICE TRANSACTIONS on transactions Vol.E65-E No.7 pp.385-389
- Publication Date
- 1982/07/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Semiconductors
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Hideo UCHIDA, Tetsuya SUGIYAMA, Tadatsugu ITOH, "Characteristics of n+/p Silicon Solar Cells Formed by Partially Ionized MBE" in IEICE TRANSACTIONS on transactions,
vol. E65-E, no. 7, pp. 385-389, July 1982, doi: .
Abstract: By means of partially ionized MBE (PI-MBE), n+/p silicon solar cells have been fabricated. The surface layer epitaxially grown on a p-type bulk silicon substrate (ps
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e65-e_7_385/_p
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@ARTICLE{e65-e_7_385,
author={Hideo UCHIDA, Tetsuya SUGIYAMA, Tadatsugu ITOH, },
journal={IEICE TRANSACTIONS on transactions},
title={Characteristics of n+/p Silicon Solar Cells Formed by Partially Ionized MBE},
year={1982},
volume={E65-E},
number={7},
pages={385-389},
abstract={By means of partially ionized MBE (PI-MBE), n+/p silicon solar cells have been fabricated. The surface layer epitaxially grown on a p-type bulk silicon substrate (ps
keywords={},
doi={},
ISSN={},
month={July},}
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TY - JOUR
TI - Characteristics of n+/p Silicon Solar Cells Formed by Partially Ionized MBE
T2 - IEICE TRANSACTIONS on transactions
SP - 385
EP - 389
AU - Hideo UCHIDA
AU - Tetsuya SUGIYAMA
AU - Tadatsugu ITOH
PY - 1982
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E65-E
IS - 7
JA - IEICE TRANSACTIONS on transactions
Y1 - July 1982
AB - By means of partially ionized MBE (PI-MBE), n+/p silicon solar cells have been fabricated. The surface layer epitaxially grown on a p-type bulk silicon substrate (ps
ER -
English
