Microwave Broadband GaAs Monolithic Amplifier

Kazuhiko HONJO; Tadahiko SUGIURA

Microwave Broadband GaAs Monolithic Amplifier

Kazuhiko HONJO, Tadahiko SUGIURA

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It is necessary for microwave monolithic integrated circuits (MMICs) to avoid performance variations due to non-uniformity in circuit parameters, as well as to improve uniformity for semiconductor wafers. In this paper, resistive elements, resulting in low circuit Q, were introduced into a microwave GaAs monolithic amplifier, to make it insensitive to the circuit parameter variations. Also, an ion implantation technique and the Closely Spaced Electrode FET" structure were adopted to improve the uniformity in FET active layers and resistive layers. These brought about good results. The developed GaAs monolithic amplifier is a 3-stage amplifier. The load for each FET is mainly formed by a resistance and the next stage FET input capacitance, except for the final stage FET. Meander and spiral transmission lines are used for peaking. The developed GaAs monolithic amplifier provides more than 7.5-dB gain from below 100 MHz to 8.5 GHz without any circuit trimming. The amplifier also has low input and output VSWR. Cascading two amplifier chips, more than 14-dB gain could be achieved from below 100 MHz to 8.7 GHz. Both calculated and measured characteristics for the amplifier are comparatively in good agreement. Also, amplifier performance variations due to the circuit parameter variations are discussed comparatively both for resistive matching network and conventional loss-less matching networks.

Publication: IEICE TRANSACTIONS on transactions Vol.E66-E No.5 pp.298-304

Publication Date: 1983/05/25

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Type of Manuscript: PAPER

Category: Microwaves and Millimeter Waves

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Kazuhiko HONJO
Tadahiko SUGIURA

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Kazuhiko HONJO, Tadahiko SUGIURA, "Microwave Broadband GaAs Monolithic Amplifier" in IEICE TRANSACTIONS on transactions, vol. E66-E, no. 5, pp. 298-304, May 1983, doi: .
Abstract: It is necessary for microwave monolithic integrated circuits (MMICs) to avoid performance variations due to non-uniformity in circuit parameters, as well as to improve uniformity for semiconductor wafers. In this paper, resistive elements, resulting in low circuit Q, were introduced into a microwave GaAs monolithic amplifier, to make it insensitive to the circuit parameter variations. Also, an ion implantation technique and the Closely Spaced Electrode FET" structure were adopted to improve the uniformity in FET active layers and resistive layers. These brought about good results. The developed GaAs monolithic amplifier is a 3-stage amplifier. The load for each FET is mainly formed by a resistance and the next stage FET input capacitance, except for the final stage FET. Meander and spiral transmission lines are used for peaking. The developed GaAs monolithic amplifier provides more than 7.5-dB gain from below 100 MHz to 8.5 GHz without any circuit trimming. The amplifier also has low input and output VSWR. Cascading two amplifier chips, more than 14-dB gain could be achieved from below 100 MHz to 8.7 GHz. Both calculated and measured characteristics for the amplifier are comparatively in good agreement. Also, amplifier performance variations due to the circuit parameter variations are discussed comparatively both for resistive matching network and conventional loss-less matching networks.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e66-e_5_298/_p

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@ARTICLE{e66-e_5_298,
author={Kazuhiko HONJO, Tadahiko SUGIURA, },
journal={IEICE TRANSACTIONS on transactions},
title={Microwave Broadband GaAs Monolithic Amplifier},
year={1983},
volume={E66-E},
number={5},
pages={298-304},
abstract={It is necessary for microwave monolithic integrated circuits (MMICs) to avoid performance variations due to non-uniformity in circuit parameters, as well as to improve uniformity for semiconductor wafers. In this paper, resistive elements, resulting in low circuit Q, were introduced into a microwave GaAs monolithic amplifier, to make it insensitive to the circuit parameter variations. Also, an ion implantation technique and the Closely Spaced Electrode FET" structure were adopted to improve the uniformity in FET active layers and resistive layers. These brought about good results. The developed GaAs monolithic amplifier is a 3-stage amplifier. The load for each FET is mainly formed by a resistance and the next stage FET input capacitance, except for the final stage FET. Meander and spiral transmission lines are used for peaking. The developed GaAs monolithic amplifier provides more than 7.5-dB gain from below 100 MHz to 8.5 GHz without any circuit trimming. The amplifier also has low input and output VSWR. Cascading two amplifier chips, more than 14-dB gain could be achieved from below 100 MHz to 8.7 GHz. Both calculated and measured characteristics for the amplifier are comparatively in good agreement. Also, amplifier performance variations due to the circuit parameter variations are discussed comparatively both for resistive matching network and conventional loss-less matching networks.},
keywords={},
doi={},
ISSN={},
month={May},}

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TY - JOUR
TI - Microwave Broadband GaAs Monolithic Amplifier
T2 - IEICE TRANSACTIONS on transactions
SP - 298
EP - 304
AU - Kazuhiko HONJO
AU - Tadahiko SUGIURA
PY - 1983
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E66-E
IS - 5
JA - IEICE TRANSACTIONS on transactions
Y1 - May 1983
AB - It is necessary for microwave monolithic integrated circuits (MMICs) to avoid performance variations due to non-uniformity in circuit parameters, as well as to improve uniformity for semiconductor wafers. In this paper, resistive elements, resulting in low circuit Q, were introduced into a microwave GaAs monolithic amplifier, to make it insensitive to the circuit parameter variations. Also, an ion implantation technique and the Closely Spaced Electrode FET" structure were adopted to improve the uniformity in FET active layers and resistive layers. These brought about good results. The developed GaAs monolithic amplifier is a 3-stage amplifier. The load for each FET is mainly formed by a resistance and the next stage FET input capacitance, except for the final stage FET. Meander and spiral transmission lines are used for peaking. The developed GaAs monolithic amplifier provides more than 7.5-dB gain from below 100 MHz to 8.5 GHz without any circuit trimming. The amplifier also has low input and output VSWR. Cascading two amplifier chips, more than 14-dB gain could be achieved from below 100 MHz to 8.7 GHz. Both calculated and measured characteristics for the amplifier are comparatively in good agreement. Also, amplifier performance variations due to the circuit parameter variations are discussed comparatively both for resistive matching network and conventional loss-less matching networks.
ER -