IEICE TRANSACTIONS on transactions
5 GHz GaAs Monolithic Astable Multivibrator Type Voltage Controlled Oscillator
Summary :
A 5 GHz GaAs Monolithic astable multivibrator type voltage controlled oscillator has been developed. The monolithic oscillator uses 2 µm long self aligned TiW-silicide gate MESFETs, and GaAs Shottky diodes for capacitance. Good agreement between the experiment and calculations for oscillation frequency characteristics versus control voltage, is obtained by assuming donor density in the FET active layer to be a Gaussian distribution. This oscillator is useful for monolithic front ends and phase-locked oscillators used in microwave signal processing. X band oscillation frequency will be able to obtained with 1 µm long gate FET and low loss resonance inductors.
- Publication
- IEICE TRANSACTIONS on transactions Vol.E67-E No.3 pp.161-165
- Publication Date
- 1984/03/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Integrated Circuits
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Masafumi SHIGAKI, Yoshimasa DAIDO, Yukio TAKEDA, Kenichi IMAMURA, Hidetake SUZUKI, "5 GHz GaAs Monolithic Astable Multivibrator Type Voltage Controlled Oscillator" in IEICE TRANSACTIONS on transactions,
vol. E67-E, no. 3, pp. 161-165, March 1984, doi: .
Abstract: A 5 GHz GaAs Monolithic astable multivibrator type voltage controlled oscillator has been developed. The monolithic oscillator uses 2 µm long self aligned TiW-silicide gate MESFETs, and GaAs Shottky diodes for capacitance. Good agreement between the experiment and calculations for oscillation frequency characteristics versus control voltage, is obtained by assuming donor density in the FET active layer to be a Gaussian distribution. This oscillator is useful for monolithic front ends and phase-locked oscillators used in microwave signal processing. X band oscillation frequency will be able to obtained with 1 µm long gate FET and low loss resonance inductors.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e67-e_3_161/_p
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@ARTICLE{e67-e_3_161,
author={Masafumi SHIGAKI, Yoshimasa DAIDO, Yukio TAKEDA, Kenichi IMAMURA, Hidetake SUZUKI, },
journal={IEICE TRANSACTIONS on transactions},
title={5 GHz GaAs Monolithic Astable Multivibrator Type Voltage Controlled Oscillator},
year={1984},
volume={E67-E},
number={3},
pages={161-165},
abstract={A 5 GHz GaAs Monolithic astable multivibrator type voltage controlled oscillator has been developed. The monolithic oscillator uses 2 µm long self aligned TiW-silicide gate MESFETs, and GaAs Shottky diodes for capacitance. Good agreement between the experiment and calculations for oscillation frequency characteristics versus control voltage, is obtained by assuming donor density in the FET active layer to be a Gaussian distribution. This oscillator is useful for monolithic front ends and phase-locked oscillators used in microwave signal processing. X band oscillation frequency will be able to obtained with 1 µm long gate FET and low loss resonance inductors.},
keywords={},
doi={},
ISSN={},
month={March},}
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TY - JOUR
TI - 5 GHz GaAs Monolithic Astable Multivibrator Type Voltage Controlled Oscillator
T2 - IEICE TRANSACTIONS on transactions
SP - 161
EP - 165
AU - Masafumi SHIGAKI
AU - Yoshimasa DAIDO
AU - Yukio TAKEDA
AU - Kenichi IMAMURA
AU - Hidetake SUZUKI
PY - 1984
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E67-E
IS - 3
JA - IEICE TRANSACTIONS on transactions
Y1 - March 1984
AB - A 5 GHz GaAs Monolithic astable multivibrator type voltage controlled oscillator has been developed. The monolithic oscillator uses 2 µm long self aligned TiW-silicide gate MESFETs, and GaAs Shottky diodes for capacitance. Good agreement between the experiment and calculations for oscillation frequency characteristics versus control voltage, is obtained by assuming donor density in the FET active layer to be a Gaussian distribution. This oscillator is useful for monolithic front ends and phase-locked oscillators used in microwave signal processing. X band oscillation frequency will be able to obtained with 1 µm long gate FET and low loss resonance inductors.
ER -
English
