IEICE TRANSACTIONS on transactions
Lasing Characteristic of GaInAsP/InP Surface Emitting Laser
Summary :
This paper presents a surface emitting injection laser with improved short cavity structure operating at 1.30 µm (77 K) of wavelength. The selective etching technique has been applied to take out the InP substrate in order to reduce the absorption loss and resultant cavity length was 7 µm. The threshold was as low as 50 mA at 77 K. The device operated up to 140 K with one single longitudinal mode and small wavelength change (0.64
- Publication
- IEICE TRANSACTIONS on transactions Vol.E68-E No.2 pp.91-97
- Publication Date
- 1985/02/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Optical and Quantum Electronics
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Kenichi IGA, Haruhisa SODA, Tomoji TERAKADO, Satoshi SHIMIZU, "Lasing Characteristic of GaInAsP/InP Surface Emitting Laser" in IEICE TRANSACTIONS on transactions,
vol. E68-E, no. 2, pp. 91-97, February 1985, doi: .
Abstract: This paper presents a surface emitting injection laser with improved short cavity structure operating at 1.30 µm (77 K) of wavelength. The selective etching technique has been applied to take out the InP substrate in order to reduce the absorption loss and resultant cavity length was 7 µm. The threshold was as low as 50 mA at 77 K. The device operated up to 140 K with one single longitudinal mode and small wavelength change (0.64
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e68-e_2_91/_p
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@ARTICLE{e68-e_2_91,
author={Kenichi IGA, Haruhisa SODA, Tomoji TERAKADO, Satoshi SHIMIZU, },
journal={IEICE TRANSACTIONS on transactions},
title={Lasing Characteristic of GaInAsP/InP Surface Emitting Laser},
year={1985},
volume={E68-E},
number={2},
pages={91-97},
abstract={This paper presents a surface emitting injection laser with improved short cavity structure operating at 1.30 µm (77 K) of wavelength. The selective etching technique has been applied to take out the InP substrate in order to reduce the absorption loss and resultant cavity length was 7 µm. The threshold was as low as 50 mA at 77 K. The device operated up to 140 K with one single longitudinal mode and small wavelength change (0.64
keywords={},
doi={},
ISSN={},
month={February},}
Copy
TY - JOUR
TI - Lasing Characteristic of GaInAsP/InP Surface Emitting Laser
T2 - IEICE TRANSACTIONS on transactions
SP - 91
EP - 97
AU - Kenichi IGA
AU - Haruhisa SODA
AU - Tomoji TERAKADO
AU - Satoshi SHIMIZU
PY - 1985
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E68-E
IS - 2
JA - IEICE TRANSACTIONS on transactions
Y1 - February 1985
AB - This paper presents a surface emitting injection laser with improved short cavity structure operating at 1.30 µm (77 K) of wavelength. The selective etching technique has been applied to take out the InP substrate in order to reduce the absorption loss and resultant cavity length was 7 µm. The threshold was as low as 50 mA at 77 K. The device operated up to 140 K with one single longitudinal mode and small wavelength change (0.64
ER -
English
