Numerical Analysis on Dynamic Performance of Amorphous-Silicon Transistor Circuits
Summary :
The dynamic performance of amorphous-silicon transistor circuits has been numerically analyzed. A novel dynamic circuit composed of amorphous-silicon Schottky-barrier diodes and field-effect transistors has been shown to have a superior performance, and the optimum circuit parameters have been discussed. The circuit having 1µm-long, self-aligned transistors has been predicted to be operable at multi-MHz rates.
- Publication
- IEICE TRANSACTIONS on transactions Vol.E69-E No.1 pp.56-63
- Publication Date
- 1986/01/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Electronic Circuits
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Hiroyuki OKADA, Yasutaka UCHIDA, Masakiyo MATSUMURA, "Numerical Analysis on Dynamic Performance of Amorphous-Silicon Transistor Circuits" in IEICE TRANSACTIONS on transactions,
vol. E69-E, no. 1, pp. 56-63, January 1986, doi: .
Abstract: The dynamic performance of amorphous-silicon transistor circuits has been numerically analyzed. A novel dynamic circuit composed of amorphous-silicon Schottky-barrier diodes and field-effect transistors has been shown to have a superior performance, and the optimum circuit parameters have been discussed. The circuit having 1µm-long, self-aligned transistors has been predicted to be operable at multi-MHz rates.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e69-e_1_56/_p
Copy
@ARTICLE{e69-e_1_56,
author={Hiroyuki OKADA, Yasutaka UCHIDA, Masakiyo MATSUMURA, },
journal={IEICE TRANSACTIONS on transactions},
title={Numerical Analysis on Dynamic Performance of Amorphous-Silicon Transistor Circuits},
year={1986},
volume={E69-E},
number={1},
pages={56-63},
abstract={The dynamic performance of amorphous-silicon transistor circuits has been numerically analyzed. A novel dynamic circuit composed of amorphous-silicon Schottky-barrier diodes and field-effect transistors has been shown to have a superior performance, and the optimum circuit parameters have been discussed. The circuit having 1µm-long, self-aligned transistors has been predicted to be operable at multi-MHz rates.},
keywords={},
doi={},
ISSN={},
month={January},}
Copy
TY - JOUR
TI - Numerical Analysis on Dynamic Performance of Amorphous-Silicon Transistor Circuits
T2 - IEICE TRANSACTIONS on transactions
SP - 56
EP - 63
AU - Hiroyuki OKADA
AU - Yasutaka UCHIDA
AU - Masakiyo MATSUMURA
PY - 1986
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E69-E
IS - 1
JA - IEICE TRANSACTIONS on transactions
Y1 - January 1986
AB - The dynamic performance of amorphous-silicon transistor circuits has been numerically analyzed. A novel dynamic circuit composed of amorphous-silicon Schottky-barrier diodes and field-effect transistors has been shown to have a superior performance, and the optimum circuit parameters have been discussed. The circuit having 1µm-long, self-aligned transistors has been predicted to be operable at multi-MHz rates.
ER -
English
