Annealing Effect on the Resistivity of Phosphorus Doped LPCVD Polycrystalline Silicon Films
Summary :
The dependence of resistivity of phosphorus doped poly-Si films on annealing temperature varies with doping concentration. This phenomenon can be explained by the segregation of dopant atoms to the grain boundaries in the films.
- Publication
- IEICE TRANSACTIONS on transactions Vol.E69-E No.4 pp.235-237
- Publication Date
- 1986/04/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
- Category
- Silicon Devices and Integrated Circuits
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Keyword
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Yoji SAITO, Chinami KAWAMOTO, Hiroshi KUWANO, "Annealing Effect on the Resistivity of Phosphorus Doped LPCVD Polycrystalline Silicon Films" in IEICE TRANSACTIONS on transactions,
vol. E69-E, no. 4, pp. 235-237, April 1986, doi: .
Abstract: The dependence of resistivity of phosphorus doped poly-Si films on annealing temperature varies with doping concentration. This phenomenon can be explained by the segregation of dopant atoms to the grain boundaries in the films.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e69-e_4_235/_p
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@ARTICLE{e69-e_4_235,
author={Yoji SAITO, Chinami KAWAMOTO, Hiroshi KUWANO, },
journal={IEICE TRANSACTIONS on transactions},
title={Annealing Effect on the Resistivity of Phosphorus Doped LPCVD Polycrystalline Silicon Films},
year={1986},
volume={E69-E},
number={4},
pages={235-237},
abstract={The dependence of resistivity of phosphorus doped poly-Si films on annealing temperature varies with doping concentration. This phenomenon can be explained by the segregation of dopant atoms to the grain boundaries in the films.},
keywords={},
doi={},
ISSN={},
month={April},}
Copy
TY - JOUR
TI - Annealing Effect on the Resistivity of Phosphorus Doped LPCVD Polycrystalline Silicon Films
T2 - IEICE TRANSACTIONS on transactions
SP - 235
EP - 237
AU - Yoji SAITO
AU - Chinami KAWAMOTO
AU - Hiroshi KUWANO
PY - 1986
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E69-E
IS - 4
JA - IEICE TRANSACTIONS on transactions
Y1 - April 1986
AB - The dependence of resistivity of phosphorus doped poly-Si films on annealing temperature varies with doping concentration. This phenomenon can be explained by the segregation of dopant atoms to the grain boundaries in the films.
ER -
English
