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Estimations of Emitter Crowding Effect and Emitter Gummel Number of Amorphous SiC: H Emitter HBT

Kimihiro SASAKI, Masatoshi MORIKAWA, Seijiro FURUKAWA

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Summary :

Emitter crowding effect and emitter Gummel number of amorphous SiC: H emitter HBT have been investigated. Collector current density has been remarkably enhanced by narrowing the emitter stripe width. The emitter Gummel number has been estimated as high as 21014s/cm4.

Publication
IEICE TRANSACTIONS on transactions Vol.E69-E No.4 pp.241-242
Publication Date
1986/04/25
Publicized
Online ISSN
DOI
Type of Manuscript
Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
Category
Silicon Devices and Integrated Circuits

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