IEICE TRANSACTIONS on transactions
Design Optimization of 1000 V Resistive Field Plate
Summary :
Resistive field plates achieve high breakdown voltage when merged with an ordinary metal field plate. The optimum design of the structure was studied by a two dimensional device model and experiments. It was found that a properly combined structure realizes not only a higher breakdown voltage for shallow junctions but also a higher area efficiency, compared with conventional guard ring technologies.
- Publication
- IEICE TRANSACTIONS on transactions Vol.E69-E No.4 pp.246-247
- Publication Date
- 1986/04/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
- Category
- Silicon Devices and Integrated Circuits
Authors
Keyword
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Kiminori WATANABE, Akio NAKAGAWA, Hiromichi OHASHI, "Design Optimization of 1000 V Resistive Field Plate" in IEICE TRANSACTIONS on transactions,
vol. E69-E, no. 4, pp. 246-247, April 1986, doi: .
Abstract: Resistive field plates achieve high breakdown voltage when merged with an ordinary metal field plate. The optimum design of the structure was studied by a two dimensional device model and experiments. It was found that a properly combined structure realizes not only a higher breakdown voltage for shallow junctions but also a higher area efficiency, compared with conventional guard ring technologies.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e69-e_4_246/_p
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@ARTICLE{e69-e_4_246,
author={Kiminori WATANABE, Akio NAKAGAWA, Hiromichi OHASHI, },
journal={IEICE TRANSACTIONS on transactions},
title={Design Optimization of 1000 V Resistive Field Plate},
year={1986},
volume={E69-E},
number={4},
pages={246-247},
abstract={Resistive field plates achieve high breakdown voltage when merged with an ordinary metal field plate. The optimum design of the structure was studied by a two dimensional device model and experiments. It was found that a properly combined structure realizes not only a higher breakdown voltage for shallow junctions but also a higher area efficiency, compared with conventional guard ring technologies.},
keywords={},
doi={},
ISSN={},
month={April},}
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TY - JOUR
TI - Design Optimization of 1000 V Resistive Field Plate
T2 - IEICE TRANSACTIONS on transactions
SP - 246
EP - 247
AU - Kiminori WATANABE
AU - Akio NAKAGAWA
AU - Hiromichi OHASHI
PY - 1986
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E69-E
IS - 4
JA - IEICE TRANSACTIONS on transactions
Y1 - April 1986
AB - Resistive field plates achieve high breakdown voltage when merged with an ordinary metal field plate. The optimum design of the structure was studied by a two dimensional device model and experiments. It was found that a properly combined structure realizes not only a higher breakdown voltage for shallow junctions but also a higher area efficiency, compared with conventional guard ring technologies.
ER -
English
