A New Memory Cell Array Structure for High Density DRAMs
Summary :
A new memory cell array structure for high density DRAMs is proposed. This new structure is superior to both conventional open bit line and folded bit line structures when the use of isolation merged trench cells, such as FC cell, are considered. The application of this structure to a 16 M bit DRAM cell array design will be also discussed.
- Publication
- IEICE TRANSACTIONS on transactions Vol.E69-E No.4 pp.272-273
- Publication Date
- 1986/04/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
- Category
- Silicon Devices and Integrated Circuits
Authors
Keyword
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Tatsuo IKAWA, Tsuneaki FUSE, Shigeyoshi WATANABE, "A New Memory Cell Array Structure for High Density DRAMs" in IEICE TRANSACTIONS on transactions,
vol. E69-E, no. 4, pp. 272-273, April 1986, doi: .
Abstract: A new memory cell array structure for high density DRAMs is proposed. This new structure is superior to both conventional open bit line and folded bit line structures when the use of isolation merged trench cells, such as FC cell, are considered. The application of this structure to a 16 M bit DRAM cell array design will be also discussed.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e69-e_4_272/_p
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@ARTICLE{e69-e_4_272,
author={Tatsuo IKAWA, Tsuneaki FUSE, Shigeyoshi WATANABE, },
journal={IEICE TRANSACTIONS on transactions},
title={A New Memory Cell Array Structure for High Density DRAMs},
year={1986},
volume={E69-E},
number={4},
pages={272-273},
abstract={A new memory cell array structure for high density DRAMs is proposed. This new structure is superior to both conventional open bit line and folded bit line structures when the use of isolation merged trench cells, such as FC cell, are considered. The application of this structure to a 16 M bit DRAM cell array design will be also discussed.},
keywords={},
doi={},
ISSN={},
month={April},}
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TY - JOUR
TI - A New Memory Cell Array Structure for High Density DRAMs
T2 - IEICE TRANSACTIONS on transactions
SP - 272
EP - 273
AU - Tatsuo IKAWA
AU - Tsuneaki FUSE
AU - Shigeyoshi WATANABE
PY - 1986
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E69-E
IS - 4
JA - IEICE TRANSACTIONS on transactions
Y1 - April 1986
AB - A new memory cell array structure for high density DRAMs is proposed. This new structure is superior to both conventional open bit line and folded bit line structures when the use of isolation merged trench cells, such as FC cell, are considered. The application of this structure to a 16 M bit DRAM cell array design will be also discussed.
ER -
English
