A High Resolution Linear IRCCD Image Sensor with 1024 Pixels

Nobukazu TERANISHI; Hisashi HARADA; Takanori TANAKA; Koh-ichi ARAI

A High Resolution Linear IRCCD Image Sensor with 1024 Pixels

Nobukazu TERANISHI, Hisashi HARADA, Takanori TANAKA, Koh-ichi ARAI

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A 1024 pixel, 14µm pitch, high resolution linear infrared CCD image sensor is developed, especially for remote sensing use. Using a PtSi/Si Schottky barrier instead of a conventional Pd₂Si/Si Schottky barrier, middle and short wavelength infrared image can be taken. The power consumption by an on-chip amplifier is only 7 mW, which is suitable for satellite application.

Publication: IEICE TRANSACTIONS on transactions Vol.E69-E No.4 pp.274-276

Publication Date: 1986/04/25

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Type of Manuscript: Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)

Category: Silicon Devices and Integrated Circuits

Authors

Nobukazu TERANISHI
Hisashi HARADA
Takanori TANAKA
Koh-ichi ARAI

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Nobukazu TERANISHI, Hisashi HARADA, Takanori TANAKA, Koh-ichi ARAI, "A High Resolution Linear IRCCD Image Sensor with 1024 Pixels" in IEICE TRANSACTIONS on transactions, vol. E69-E, no. 4, pp. 274-276, April 1986, doi: .
Abstract: A 1024 pixel, 14µm pitch, high resolution linear infrared CCD image sensor is developed, especially for remote sensing use. Using a PtSi/Si Schottky barrier instead of a conventional Pd₂Si/Si Schottky barrier, middle and short wavelength infrared image can be taken. The power consumption by an on-chip amplifier is only 7 mW, which is suitable for satellite application.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e69-e_4_274/_p

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@ARTICLE{e69-e_4_274,
author={Nobukazu TERANISHI, Hisashi HARADA, Takanori TANAKA, Koh-ichi ARAI, },
journal={IEICE TRANSACTIONS on transactions},
title={A High Resolution Linear IRCCD Image Sensor with 1024 Pixels},
year={1986},
volume={E69-E},
number={4},
pages={274-276},
abstract={A 1024 pixel, 14µm pitch, high resolution linear infrared CCD image sensor is developed, especially for remote sensing use. Using a PtSi/Si Schottky barrier instead of a conventional Pd₂Si/Si Schottky barrier, middle and short wavelength infrared image can be taken. The power consumption by an on-chip amplifier is only 7 mW, which is suitable for satellite application.},
keywords={},
doi={},
ISSN={},
month={April},}

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TY - JOUR
TI - A High Resolution Linear IRCCD Image Sensor with 1024 Pixels
T2 - IEICE TRANSACTIONS on transactions
SP - 274
EP - 276
AU - Nobukazu TERANISHI
AU - Hisashi HARADA
AU - Takanori TANAKA
AU - Koh-ichi ARAI
PY - 1986
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E69-E
IS - 4
JA - IEICE TRANSACTIONS on transactions
Y1 - April 1986
AB - A 1024 pixel, 14µm pitch, high resolution linear infrared CCD image sensor is developed, especially for remote sensing use. Using a PtSi/Si Schottky barrier instead of a conventional Pd₂Si/Si Schottky barrier, middle and short wavelength infrared image can be taken. The power consumption by an on-chip amplifier is only 7 mW, which is suitable for satellite application.
ER -