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Numerical Analysis of Energy Transport Effects in an AlGaAs/GaAs Heterojunction Bipolar Transistor

Kazushige HORIO, Hisayoshi YANAI

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Summary :

A numerical model for AlGaAs/GaAs HBT's is proposed in which the transport of electron energy is included by using hydrodynamic equation derived from the Boltzmann equation. The results are compared with those by the conventional model, indicating the importance of the energy transport effects.

Publication
IEICE TRANSACTIONS on transactions Vol.E69-E No.4 pp.279-282
Publication Date
1986/04/25
Publicized
Online ISSN
DOI
Type of Manuscript
Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
Category
Compound Semiconductor Devices

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