Dependence of Switching Performance on Emitter Resistance and Current Gain in GaAs/AlGaAs HBT ECL Gates
Summary :
The effects of current gain and emitter resistance on the switching performance of ECL gates with GaAs/AlGaAs HBTs are analyzed by circuit simulation. A minimum current gain of 10 and a maximum emitter resistance of less than one fifth of the load resistance were found to be necessary for stable ECL inverter operation.
- Publication
- IEICE TRANSACTIONS on transactions Vol.E69-E No.4 pp.286-287
- Publication Date
- 1986/04/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
- Category
- Compound Semiconductor Devices
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Keyword
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Yoshiki YAMAUCHI, Tadao ISHIBASHI, "Dependence of Switching Performance on Emitter Resistance and Current Gain in GaAs/AlGaAs HBT ECL Gates" in IEICE TRANSACTIONS on transactions,
vol. E69-E, no. 4, pp. 286-287, April 1986, doi: .
Abstract: The effects of current gain and emitter resistance on the switching performance of ECL gates with GaAs/AlGaAs HBTs are analyzed by circuit simulation. A minimum current gain of 10 and a maximum emitter resistance of less than one fifth of the load resistance were found to be necessary for stable ECL inverter operation.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e69-e_4_286/_p
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@ARTICLE{e69-e_4_286,
author={Yoshiki YAMAUCHI, Tadao ISHIBASHI, },
journal={IEICE TRANSACTIONS on transactions},
title={Dependence of Switching Performance on Emitter Resistance and Current Gain in GaAs/AlGaAs HBT ECL Gates},
year={1986},
volume={E69-E},
number={4},
pages={286-287},
abstract={The effects of current gain and emitter resistance on the switching performance of ECL gates with GaAs/AlGaAs HBTs are analyzed by circuit simulation. A minimum current gain of 10 and a maximum emitter resistance of less than one fifth of the load resistance were found to be necessary for stable ECL inverter operation.},
keywords={},
doi={},
ISSN={},
month={April},}
Copy
TY - JOUR
TI - Dependence of Switching Performance on Emitter Resistance and Current Gain in GaAs/AlGaAs HBT ECL Gates
T2 - IEICE TRANSACTIONS on transactions
SP - 286
EP - 287
AU - Yoshiki YAMAUCHI
AU - Tadao ISHIBASHI
PY - 1986
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E69-E
IS - 4
JA - IEICE TRANSACTIONS on transactions
Y1 - April 1986
AB - The effects of current gain and emitter resistance on the switching performance of ECL gates with GaAs/AlGaAs HBTs are analyzed by circuit simulation. A minimum current gain of 10 and a maximum emitter resistance of less than one fifth of the load resistance were found to be necessary for stable ECL inverter operation.
ER -
English
