A Switching Circuit Composed of BJT and MOS-FET
Summary :
Switching devices capable of handling more than 800 V exhibit relatively large switching loss. A new current feedback Bi-MOS consisting of a Bipolar Junction Transistor, MOS-FET and current transformer is proposed in this note. The new device reduces switching loss in 100 kHz operation and is expected to result in a DC-DC converter efficiency greater than 90%.
- Publication
- IEICE TRANSACTIONS on transactions Vol.E69-E No.4 pp.509-511
- Publication Date
- 1986/04/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
- Category
- Instrumentation and Electronic Circuits
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Yasuo OHASHI, Yutaka KUWATA, "A Switching Circuit Composed of BJT and MOS-FET" in IEICE TRANSACTIONS on transactions,
vol. E69-E, no. 4, pp. 509-511, April 1986, doi: .
Abstract: Switching devices capable of handling more than 800 V exhibit relatively large switching loss. A new current feedback Bi-MOS consisting of a Bipolar Junction Transistor, MOS-FET and current transformer is proposed in this note. The new device reduces switching loss in 100 kHz operation and is expected to result in a DC-DC converter efficiency greater than 90%.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e69-e_4_509/_p
Copy
@ARTICLE{e69-e_4_509,
author={Yasuo OHASHI, Yutaka KUWATA, },
journal={IEICE TRANSACTIONS on transactions},
title={A Switching Circuit Composed of BJT and MOS-FET},
year={1986},
volume={E69-E},
number={4},
pages={509-511},
abstract={Switching devices capable of handling more than 800 V exhibit relatively large switching loss. A new current feedback Bi-MOS consisting of a Bipolar Junction Transistor, MOS-FET and current transformer is proposed in this note. The new device reduces switching loss in 100 kHz operation and is expected to result in a DC-DC converter efficiency greater than 90%.},
keywords={},
doi={},
ISSN={},
month={April},}
Copy
TY - JOUR
TI - A Switching Circuit Composed of BJT and MOS-FET
T2 - IEICE TRANSACTIONS on transactions
SP - 509
EP - 511
AU - Yasuo OHASHI
AU - Yutaka KUWATA
PY - 1986
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E69-E
IS - 4
JA - IEICE TRANSACTIONS on transactions
Y1 - April 1986
AB - Switching devices capable of handling more than 800 V exhibit relatively large switching loss. A new current feedback Bi-MOS consisting of a Bipolar Junction Transistor, MOS-FET and current transformer is proposed in this note. The new device reduces switching loss in 100 kHz operation and is expected to result in a DC-DC converter efficiency greater than 90%.
ER -
English
