Reduction of Anodization Voltage in Hafnium Oxide Thin Film Capacitors

Atushi NOYA; Toshiji UMEZAWA

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Atushi NOYA, Toshiji UMEZAWA, "Reduction of Anodization Voltage in Hafnium Oxide Thin Film Capacitors" in IEICE TRANSACTIONS on transactions, vol. E69-E, no. 6, pp. 716-718, June 1986, doi: .
Abstract: We have successfully prepared low anodization voltage high-quality capacitors using anodized hafnium films with the anodization voltage of 40 V under the preferable conditions of anodization and heat-treatment.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e69-e_6_716/_p

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@ARTICLE{e69-e_6_716,
author={Atushi NOYA, Toshiji UMEZAWA, },
journal={IEICE TRANSACTIONS on transactions},
title={Reduction of Anodization Voltage in Hafnium Oxide Thin Film Capacitors},
year={1986},
volume={E69-E},
number={6},
pages={716-718},
abstract={We have successfully prepared low anodization voltage high-quality capacitors using anodized hafnium films with the anodization voltage of 40 V under the preferable conditions of anodization and heat-treatment.},
keywords={},
doi={},
ISSN={},
month={June},}

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TY - JOUR
TI - Reduction of Anodization Voltage in Hafnium Oxide Thin Film Capacitors
T2 - IEICE TRANSACTIONS on transactions
SP - 716
EP - 718
AU - Atushi NOYA
AU - Toshiji UMEZAWA
PY - 1986
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E69-E
IS - 6
JA - IEICE TRANSACTIONS on transactions
Y1 - June 1986
AB - We have successfully prepared low anodization voltage high-quality capacitors using anodized hafnium films with the anodization voltage of 40 V under the preferable conditions of anodization and heat-treatment.
ER -