GaInAsP/InP Surface Emitting Laser with Flat Surface Circular Buried Heterostructure
Summary :
In order to reduce the threshold current of GaInAsP/InP surface emitting (SE) laser, we introduce a flat surface circular buried heterostructure (FCBH), which has merits of both planar buried heterostructure (PBH) and buried heterostructure with a SiO2 mask (BH), into GaInAsP/InP SE laser. Its minimum threshold current was 20 mA at 77 K, which provide better result than previous PBH-SE lasers or BH-SE lasers grown with a SiO2 mask.
- Publication
- IEICE TRANSACTIONS on transactions Vol.E69-E No.9 pp.923-924
- Publication Date
- 1986/09/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- LETTER
- Category
- Optical and Quantum Electronics
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Seiji UCHIYAMA, Kenichi IGA, "GaInAsP/InP Surface Emitting Laser with Flat Surface Circular Buried Heterostructure" in IEICE TRANSACTIONS on transactions,
vol. E69-E, no. 9, pp. 923-924, September 1986, doi: .
Abstract: In order to reduce the threshold current of GaInAsP/InP surface emitting (SE) laser, we introduce a flat surface circular buried heterostructure (FCBH), which has merits of both planar buried heterostructure (PBH) and buried heterostructure with a SiO2 mask (BH), into GaInAsP/InP SE laser. Its minimum threshold current was 20 mA at 77 K, which provide better result than previous PBH-SE lasers or BH-SE lasers grown with a SiO2 mask.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e69-e_9_923/_p
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@ARTICLE{e69-e_9_923,
author={Seiji UCHIYAMA, Kenichi IGA, },
journal={IEICE TRANSACTIONS on transactions},
title={GaInAsP/InP Surface Emitting Laser with Flat Surface Circular Buried Heterostructure},
year={1986},
volume={E69-E},
number={9},
pages={923-924},
abstract={In order to reduce the threshold current of GaInAsP/InP surface emitting (SE) laser, we introduce a flat surface circular buried heterostructure (FCBH), which has merits of both planar buried heterostructure (PBH) and buried heterostructure with a SiO2 mask (BH), into GaInAsP/InP SE laser. Its minimum threshold current was 20 mA at 77 K, which provide better result than previous PBH-SE lasers or BH-SE lasers grown with a SiO2 mask.},
keywords={},
doi={},
ISSN={},
month={September},}
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TY - JOUR
TI - GaInAsP/InP Surface Emitting Laser with Flat Surface Circular Buried Heterostructure
T2 - IEICE TRANSACTIONS on transactions
SP - 923
EP - 924
AU - Seiji UCHIYAMA
AU - Kenichi IGA
PY - 1986
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E69-E
IS - 9
JA - IEICE TRANSACTIONS on transactions
Y1 - September 1986
AB - In order to reduce the threshold current of GaInAsP/InP surface emitting (SE) laser, we introduce a flat surface circular buried heterostructure (FCBH), which has merits of both planar buried heterostructure (PBH) and buried heterostructure with a SiO2 mask (BH), into GaInAsP/InP SE laser. Its minimum threshold current was 20 mA at 77 K, which provide better result than previous PBH-SE lasers or BH-SE lasers grown with a SiO2 mask.
ER -
English
