IEICE TRANSACTIONS on transactions
A Theoretical Analysis of Lasing Gain and Threshold Current in GaAs-AlGaAs SCH Lasers
Summary :
A theoretical analysis of the lasing gain and the threshold current in GaAs-AlGaAs Graded-Index Separate Confinement Hetero (GRIN-SCH) structure lasers is given. Energy levels and the state densities for electron distribution in both the well layer and the optical guiding regions are formulated. Confinement ratios of the injected electrons and holes and the optical field in the well layer are examined. The injection current, the electron lifetime due to the radiative recombination, the lasing gain and the threshold current are examined by taking into account the intraband relaxation effect of the electron wave. Optimum conditions to obtain low threshold current density are numerically discussed.
- Publication
- IEICE TRANSACTIONS on transactions Vol.E69-E No.9 pp.948-955
- Publication Date
- 1986/09/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Optical and Quantum Electronics
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Minoru YAMADA, Shouichi OGITA, Tohru MIYABO, Yasumasa NASHIDA, "A Theoretical Analysis of Lasing Gain and Threshold Current in GaAs-AlGaAs SCH Lasers" in IEICE TRANSACTIONS on transactions,
vol. E69-E, no. 9, pp. 948-955, September 1986, doi: .
Abstract: A theoretical analysis of the lasing gain and the threshold current in GaAs-AlGaAs Graded-Index Separate Confinement Hetero (GRIN-SCH) structure lasers is given. Energy levels and the state densities for electron distribution in both the well layer and the optical guiding regions are formulated. Confinement ratios of the injected electrons and holes and the optical field in the well layer are examined. The injection current, the electron lifetime due to the radiative recombination, the lasing gain and the threshold current are examined by taking into account the intraband relaxation effect of the electron wave. Optimum conditions to obtain low threshold current density are numerically discussed.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e69-e_9_948/_p
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@ARTICLE{e69-e_9_948,
author={Minoru YAMADA, Shouichi OGITA, Tohru MIYABO, Yasumasa NASHIDA, },
journal={IEICE TRANSACTIONS on transactions},
title={A Theoretical Analysis of Lasing Gain and Threshold Current in GaAs-AlGaAs SCH Lasers},
year={1986},
volume={E69-E},
number={9},
pages={948-955},
abstract={A theoretical analysis of the lasing gain and the threshold current in GaAs-AlGaAs Graded-Index Separate Confinement Hetero (GRIN-SCH) structure lasers is given. Energy levels and the state densities for electron distribution in both the well layer and the optical guiding regions are formulated. Confinement ratios of the injected electrons and holes and the optical field in the well layer are examined. The injection current, the electron lifetime due to the radiative recombination, the lasing gain and the threshold current are examined by taking into account the intraband relaxation effect of the electron wave. Optimum conditions to obtain low threshold current density are numerically discussed.},
keywords={},
doi={},
ISSN={},
month={September},}
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TY - JOUR
TI - A Theoretical Analysis of Lasing Gain and Threshold Current in GaAs-AlGaAs SCH Lasers
T2 - IEICE TRANSACTIONS on transactions
SP - 948
EP - 955
AU - Minoru YAMADA
AU - Shouichi OGITA
AU - Tohru MIYABO
AU - Yasumasa NASHIDA
PY - 1986
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E69-E
IS - 9
JA - IEICE TRANSACTIONS on transactions
Y1 - September 1986
AB - A theoretical analysis of the lasing gain and the threshold current in GaAs-AlGaAs Graded-Index Separate Confinement Hetero (GRIN-SCH) structure lasers is given. Energy levels and the state densities for electron distribution in both the well layer and the optical guiding regions are formulated. Confinement ratios of the injected electrons and holes and the optical field in the well layer are examined. The injection current, the electron lifetime due to the radiative recombination, the lasing gain and the threshold current are examined by taking into account the intraband relaxation effect of the electron wave. Optimum conditions to obtain low threshold current density are numerically discussed.
ER -
English
