Theoretical Analysis of Waveguide Laser Amplifier Using Nd Doped Garnet Crystalline Thin Film

Mitsuo YAMAGA; Koumei YUSA; Yasumitsu MIYAZAKI

Theoretical Analysis of Waveguide Laser Amplifier Using Nd Doped Garnet Crystalline Thin Film

Mitsuo YAMAGA, Koumei YUSA, Yasumitsu MIYAZAKI

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Light amplifiers are very important devices for optical fiber communication and all-optical signal processing. Waveguide-type laser amplifiers are proposed to be constructed in 1 at.% Nd doped Yittrium Gallium Garnet crystalline thin films deposited on Yittrium Aluminium Garnet substrates. The amplifiers are classified into a traveling wave (TW)type and a Fabry-Perot(FP)cavity-type. Numerical calculations of gains, SN ratios and pulse response of the optical signal for both amplifiers are carried out using the rate equations for a four-level system of Nd ions in the garnet thin-film with a thickness of about 2.5 µm. For the TW-type amplifier, the net gain and SN ratio are about 10 dB and 20 dB at the signal power of 10^-6 W and the pumping power of 210^-4W. For the FP-type amplifier, the net gain at the signal power of 10^-7W and the pumping power of 10^-4W is twice that for the TW-type amplifier. The net gain and SN ratio are 6 dB and 8 dB. Numerical calculations of the pulse response of the optical signals are carried out. The rise and fall times of the output pulse for the TW- and FP-type amplifiers are about 0.01 ns and 1 ns, respectively.

Publication: IEICE TRANSACTIONS on transactions Vol.E69-E No.9 pp.956-967

Publication Date: 1986/09/25

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Type of Manuscript: PAPER

Category: Optical and Quantum Electronics

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Mitsuo YAMAGA
Koumei YUSA
Yasumitsu MIYAZAKI

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Mitsuo YAMAGA, Koumei YUSA, Yasumitsu MIYAZAKI, "Theoretical Analysis of Waveguide Laser Amplifier Using Nd Doped Garnet Crystalline Thin Film" in IEICE TRANSACTIONS on transactions, vol. E69-E, no. 9, pp. 956-967, September 1986, doi: .
Abstract: Light amplifiers are very important devices for optical fiber communication and all-optical signal processing. Waveguide-type laser amplifiers are proposed to be constructed in 1 at.% Nd doped Yittrium Gallium Garnet crystalline thin films deposited on Yittrium Aluminium Garnet substrates. The amplifiers are classified into a traveling wave (TW)type and a Fabry-Perot(FP)cavity-type. Numerical calculations of gains, SN ratios and pulse response of the optical signal for both amplifiers are carried out using the rate equations for a four-level system of Nd ions in the garnet thin-film with a thickness of about 2.5 µm. For the TW-type amplifier, the net gain and SN ratio are about 10 dB and 20 dB at the signal power of 10^-6 W and the pumping power of 210^-4W. For the FP-type amplifier, the net gain at the signal power of 10^-7W and the pumping power of 10^-4W is twice that for the TW-type amplifier. The net gain and SN ratio are 6 dB and 8 dB. Numerical calculations of the pulse response of the optical signals are carried out. The rise and fall times of the output pulse for the TW- and FP-type amplifiers are about 0.01 ns and 1 ns, respectively.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e69-e_9_956/_p

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@ARTICLE{e69-e_9_956,
author={Mitsuo YAMAGA, Koumei YUSA, Yasumitsu MIYAZAKI, },
journal={IEICE TRANSACTIONS on transactions},
title={Theoretical Analysis of Waveguide Laser Amplifier Using Nd Doped Garnet Crystalline Thin Film},
year={1986},
volume={E69-E},
number={9},
pages={956-967},
abstract={Light amplifiers are very important devices for optical fiber communication and all-optical signal processing. Waveguide-type laser amplifiers are proposed to be constructed in 1 at.% Nd doped Yittrium Gallium Garnet crystalline thin films deposited on Yittrium Aluminium Garnet substrates. The amplifiers are classified into a traveling wave (TW)type and a Fabry-Perot(FP)cavity-type. Numerical calculations of gains, SN ratios and pulse response of the optical signal for both amplifiers are carried out using the rate equations for a four-level system of Nd ions in the garnet thin-film with a thickness of about 2.5 µm. For the TW-type amplifier, the net gain and SN ratio are about 10 dB and 20 dB at the signal power of 10^-6 W and the pumping power of 210^-4W. For the FP-type amplifier, the net gain at the signal power of 10^-7W and the pumping power of 10^-4W is twice that for the TW-type amplifier. The net gain and SN ratio are 6 dB and 8 dB. Numerical calculations of the pulse response of the optical signals are carried out. The rise and fall times of the output pulse for the TW- and FP-type amplifiers are about 0.01 ns and 1 ns, respectively.},
keywords={},
doi={},
ISSN={},
month={September},}

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TY - JOUR
TI - Theoretical Analysis of Waveguide Laser Amplifier Using Nd Doped Garnet Crystalline Thin Film
T2 - IEICE TRANSACTIONS on transactions
SP - 956
EP - 967
AU - Mitsuo YAMAGA
AU - Koumei YUSA
AU - Yasumitsu MIYAZAKI
PY - 1986
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E69-E
IS - 9
JA - IEICE TRANSACTIONS on transactions
Y1 - September 1986
AB - Light amplifiers are very important devices for optical fiber communication and all-optical signal processing. Waveguide-type laser amplifiers are proposed to be constructed in 1 at.% Nd doped Yittrium Gallium Garnet crystalline thin films deposited on Yittrium Aluminium Garnet substrates. The amplifiers are classified into a traveling wave (TW)type and a Fabry-Perot(FP)cavity-type. Numerical calculations of gains, SN ratios and pulse response of the optical signal for both amplifiers are carried out using the rate equations for a four-level system of Nd ions in the garnet thin-film with a thickness of about 2.5 µm. For the TW-type amplifier, the net gain and SN ratio are about 10 dB and 20 dB at the signal power of 10^-6 W and the pumping power of 210^-4W. For the FP-type amplifier, the net gain at the signal power of 10^-7W and the pumping power of 10^-4W is twice that for the TW-type amplifier. The net gain and SN ratio are 6 dB and 8 dB. Numerical calculations of the pulse response of the optical signals are carried out. The rise and fall times of the output pulse for the TW- and FP-type amplifiers are about 0.01 ns and 1 ns, respectively.
ER -