A New Self-Aligned Recessed-Gate GaAs MESFET Using RIBE (Reactive Ion Beam Etching) for Recess Etching

Yuhki IMAI; Kuniki OHWADA; Yoshihiro IMAMURA

A New Self-Aligned Recessed-Gate GaAs MESFET Using RIBE (Reactive Ion Beam Etching) for Recess Etching

Yuhki IMAI, Kuniki OHWADA, Yoshihiro IMAMURA

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A new self-aligned recessed-gate GaAs MESFET is developed using RIBE for recess etching. Recess-etching depth can be precisely controlled by RIBE with BCl₃ etching gas. Barrier height and ideality factor of the Schottky contact formed on 200-V bias-voltage RIBE etched surface are 0.8 V and 1.2, respectively after 400 annealing. A very short gate-length is realized simply using the sidewall formation and the conventional photolithography. Furthermore, a self-alignment of ohmic electrodes and N⁺-layers to a gate electrode is realized to minimize the source resistance. The 0.3-µm gate-length MESFET fabricated on a wafer with the carrier concentration of 1.210¹⁸ cm^-3 grown by MBE shows the transconductance as high as 415 mS/mm.

Publication: IEICE TRANSACTIONS on transactions Vol.E70-E No.10 pp.975-980

Publication Date: 1987/10/25

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Type of Manuscript: PAPER

Category: Semiconductors; Materials and Devices

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Yuhki IMAI
Kuniki OHWADA
Yoshihiro IMAMURA

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Yuhki IMAI, Kuniki OHWADA, Yoshihiro IMAMURA, "A New Self-Aligned Recessed-Gate GaAs MESFET Using RIBE (Reactive Ion Beam Etching) for Recess Etching" in IEICE TRANSACTIONS on transactions, vol. E70-E, no. 10, pp. 975-980, October 1987, doi: .
Abstract: A new self-aligned recessed-gate GaAs MESFET is developed using RIBE for recess etching. Recess-etching depth can be precisely controlled by RIBE with BCl₃ etching gas. Barrier height and ideality factor of the Schottky contact formed on 200-V bias-voltage RIBE etched surface are 0.8 V and 1.2, respectively after 400 annealing. A very short gate-length is realized simply using the sidewall formation and the conventional photolithography. Furthermore, a self-alignment of ohmic electrodes and N⁺-layers to a gate electrode is realized to minimize the source resistance. The 0.3-µm gate-length MESFET fabricated on a wafer with the carrier concentration of 1.210¹⁸ cm^-3 grown by MBE shows the transconductance as high as 415 mS/mm.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e70-e_10_975/_p

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@ARTICLE{e70-e_10_975,
author={Yuhki IMAI, Kuniki OHWADA, Yoshihiro IMAMURA, },
journal={IEICE TRANSACTIONS on transactions},
title={A New Self-Aligned Recessed-Gate GaAs MESFET Using RIBE (Reactive Ion Beam Etching) for Recess Etching},
year={1987},
volume={E70-E},
number={10},
pages={975-980},
abstract={A new self-aligned recessed-gate GaAs MESFET is developed using RIBE for recess etching. Recess-etching depth can be precisely controlled by RIBE with BCl₃ etching gas. Barrier height and ideality factor of the Schottky contact formed on 200-V bias-voltage RIBE etched surface are 0.8 V and 1.2, respectively after 400 annealing. A very short gate-length is realized simply using the sidewall formation and the conventional photolithography. Furthermore, a self-alignment of ohmic electrodes and N⁺-layers to a gate electrode is realized to minimize the source resistance. The 0.3-µm gate-length MESFET fabricated on a wafer with the carrier concentration of 1.210¹⁸ cm^-3 grown by MBE shows the transconductance as high as 415 mS/mm.},
keywords={},
doi={},
ISSN={},
month={October},}

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TY - JOUR
TI - A New Self-Aligned Recessed-Gate GaAs MESFET Using RIBE (Reactive Ion Beam Etching) for Recess Etching
T2 - IEICE TRANSACTIONS on transactions
SP - 975
EP - 980
AU - Yuhki IMAI
AU - Kuniki OHWADA
AU - Yoshihiro IMAMURA
PY - 1987
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E70-E
IS - 10
JA - IEICE TRANSACTIONS on transactions
Y1 - October 1987
AB - A new self-aligned recessed-gate GaAs MESFET is developed using RIBE for recess etching. Recess-etching depth can be precisely controlled by RIBE with BCl₃ etching gas. Barrier height and ideality factor of the Schottky contact formed on 200-V bias-voltage RIBE etched surface are 0.8 V and 1.2, respectively after 400 annealing. A very short gate-length is realized simply using the sidewall formation and the conventional photolithography. Furthermore, a self-alignment of ohmic electrodes and N⁺-layers to a gate electrode is realized to minimize the source resistance. The 0.3-µm gate-length MESFET fabricated on a wafer with the carrier concentration of 1.210¹⁸ cm^-3 grown by MBE shows the transconductance as high as 415 mS/mm.
ER -