GaAs HEMT Distributed Amplifiers

Yasushi ITO

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Yasushi ITO, "GaAs HEMT Distributed Amplifiers" in IEICE TRANSACTIONS on transactions, vol. E70-E, no. 11, pp. 1046-1048, November 1987, doi: .
Abstract: A 0.1 to 18 GHz hybrid distributed amplifier using GaAs HEMTs with 0.3 micron gate length and 200 micron gate width has been realized. This amplifier exhibits 9.00.5 dB of gain and less than 5.4 dB of noise figure. This letter describes the design approach which maximizes the gain-bandwidth product of the hybrid distributed amplifier, adding several FETs.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e70-e_11_1046/_p

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@ARTICLE{e70-e_11_1046,
author={Yasushi ITO, },
journal={IEICE TRANSACTIONS on transactions},
title={GaAs HEMT Distributed Amplifiers},
year={1987},
volume={E70-E},
number={11},
pages={1046-1048},
abstract={A 0.1 to 18 GHz hybrid distributed amplifier using GaAs HEMTs with 0.3 micron gate length and 200 micron gate width has been realized. This amplifier exhibits 9.00.5 dB of gain and less than 5.4 dB of noise figure. This letter describes the design approach which maximizes the gain-bandwidth product of the hybrid distributed amplifier, adding several FETs.},
keywords={},
doi={},
ISSN={},
month={November},}

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TY - JOUR
TI - GaAs HEMT Distributed Amplifiers
T2 - IEICE TRANSACTIONS on transactions
SP - 1046
EP - 1048
AU - Yasushi ITO
PY - 1987
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E70-E
IS - 11
JA - IEICE TRANSACTIONS on transactions
Y1 - November 1987
AB - A 0.1 to 18 GHz hybrid distributed amplifier using GaAs HEMTs with 0.3 micron gate length and 200 micron gate width has been realized. This amplifier exhibits 9.00.5 dB of gain and less than 5.4 dB of noise figure. This letter describes the design approach which maximizes the gain-bandwidth product of the hybrid distributed amplifier, adding several FETs.
ER -