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Error Estimation of a Charge Sheet Model in Calculating the Drain Current of a Thin Gate Oxide MOSFET

Kiyoko NAGAI, Yutaka HAYASHI

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Summary :

The error in the charge sheet model proposed by Brews for the approximation of the drain current of a long channel MOSFET has been analyzed. Percent error curves are presented as a function of surface potential with doping concentration and oxide thickness as parameters.

Publication
IEICE TRANSACTIONS on transactions Vol.E70-E No.11 pp.1104-1105
Publication Date
1987/11/25
Publicized
Online ISSN
DOI
Type of Manuscript
LETTER
Category
Semiconductors; Materials and Devices

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