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IEICE TRANSACTIONS on transactions

Effect of Annealing on Electrical Conductivity of Sintered Silicon Carbide

Kazuo OKANO

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Summary :

Effect of annealing on electrical conductivity of sintered silicon carbide containing boron carbide and carbon was investigated. The silicon carbide was sintered at the temperature range of 1650-2150 for 0.5 hr in vacuum. Samples sintered at above 1980 were annealed in argon at 1750 to 2000 for 0.5 hr to 5 hrs. The electrical conductivity was measured for both non-annealed and annealed silicon carbide, and following results were obtained.(1) The electrical conductivity was reduced about one order of magnitude by annealing for silicon carbide sintered at above 2050.(2) The effect to annealing on electrical conductivity was maximum at 1950 of annealing temperature, and is saturated at 3 hrs of annealing time.

Publication
IEICE TRANSACTIONS on transactions Vol.E70-E No.4 pp.336-338
Publication Date
1987/04/25
Publicized
Online ISSN
DOI
Type of Manuscript
Special Section LETTER (Special Issue: Papers from 1987 National Convention IEICE)
Category
Components and Materials

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