Effect of Annealing on Electrical Conductivity of Sintered Silicon Carbide

Kazuo OKANO

Effect of Annealing on Electrical Conductivity of Sintered Silicon Carbide

Kazuo OKANO

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Effect of annealing on electrical conductivity of sintered silicon carbide containing boron carbide and carbon was investigated. The silicon carbide was sintered at the temperature range of 1650-2150 for 0.5 hr in vacuum. Samples sintered at above 1980 were annealed in argon at 1750 to 2000 for 0.5 hr to 5 hrs. The electrical conductivity was measured for both non-annealed and annealed silicon carbide, and following results were obtained.(1) The electrical conductivity was reduced about one order of magnitude by annealing for silicon carbide sintered at above 2050.(2) The effect to annealing on electrical conductivity was maximum at 1950 of annealing temperature, and is saturated at 3 hrs of annealing time.

Publication: IEICE TRANSACTIONS on transactions Vol.E70-E No.4 pp.336-338

Publication Date: 1987/04/25

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Type of Manuscript: Special Section LETTER (Special Issue: Papers from 1987 National Convention IEICE)

Category: Components and Materials

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Kazuo OKANO

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Kazuo OKANO, "Effect of Annealing on Electrical Conductivity of Sintered Silicon Carbide" in IEICE TRANSACTIONS on transactions, vol. E70-E, no. 4, pp. 336-338, April 1987, doi: .
Abstract: Effect of annealing on electrical conductivity of sintered silicon carbide containing boron carbide and carbon was investigated. The silicon carbide was sintered at the temperature range of 1650-2150 for 0.5 hr in vacuum. Samples sintered at above 1980 were annealed in argon at 1750 to 2000 for 0.5 hr to 5 hrs. The electrical conductivity was measured for both non-annealed and annealed silicon carbide, and following results were obtained.(1) The electrical conductivity was reduced about one order of magnitude by annealing for silicon carbide sintered at above 2050.(2) The effect to annealing on electrical conductivity was maximum at 1950 of annealing temperature, and is saturated at 3 hrs of annealing time.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e70-e_4_336/_p

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@ARTICLE{e70-e_4_336,
author={Kazuo OKANO, },
journal={IEICE TRANSACTIONS on transactions},
title={Effect of Annealing on Electrical Conductivity of Sintered Silicon Carbide},
year={1987},
volume={E70-E},
number={4},
pages={336-338},
abstract={Effect of annealing on electrical conductivity of sintered silicon carbide containing boron carbide and carbon was investigated. The silicon carbide was sintered at the temperature range of 1650-2150 for 0.5 hr in vacuum. Samples sintered at above 1980 were annealed in argon at 1750 to 2000 for 0.5 hr to 5 hrs. The electrical conductivity was measured for both non-annealed and annealed silicon carbide, and following results were obtained.(1) The electrical conductivity was reduced about one order of magnitude by annealing for silicon carbide sintered at above 2050.(2) The effect to annealing on electrical conductivity was maximum at 1950 of annealing temperature, and is saturated at 3 hrs of annealing time.},
keywords={},
doi={},
ISSN={},
month={April},}

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TY - JOUR
TI - Effect of Annealing on Electrical Conductivity of Sintered Silicon Carbide
T2 - IEICE TRANSACTIONS on transactions
SP - 336
EP - 338
AU - Kazuo OKANO
PY - 1987
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E70-E
IS - 4
JA - IEICE TRANSACTIONS on transactions
Y1 - April 1987
AB - Effect of annealing on electrical conductivity of sintered silicon carbide containing boron carbide and carbon was investigated. The silicon carbide was sintered at the temperature range of 1650-2150 for 0.5 hr in vacuum. Samples sintered at above 1980 were annealed in argon at 1750 to 2000 for 0.5 hr to 5 hrs. The electrical conductivity was measured for both non-annealed and annealed silicon carbide, and following results were obtained.(1) The electrical conductivity was reduced about one order of magnitude by annealing for silicon carbide sintered at above 2050.(2) The effect to annealing on electrical conductivity was maximum at 1950 of annealing temperature, and is saturated at 3 hrs of annealing time.
ER -