Coplanar silicon-coupled bridge type Josephson junctions with recessed niobium electrode structure were fabricated with a new planarization process and Josephson current was observed for the device with an electrode spacing of 50 nm. This device structure has potential to a three-terminal supercouductive device controlled by an insulated gate.
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Mitsuru HIRAKI, Takuo SUGANO, "Coplanar Silicon-Coupled Josephson Junctions with Recessed Electrode Structure" in IEICE TRANSACTIONS on transactions,
vol. E70-E, no. 4, pp. 389-391, April 1987, doi: .
Abstract: Coplanar silicon-coupled bridge type Josephson junctions with recessed niobium electrode structure were fabricated with a new planarization process and Josephson current was observed for the device with an electrode spacing of 50 nm. This device structure has potential to a three-terminal supercouductive device controlled by an insulated gate.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e70-e_4_389/_p
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@ARTICLE{e70-e_4_389,
author={Mitsuru HIRAKI, Takuo SUGANO, },
journal={IEICE TRANSACTIONS on transactions},
title={Coplanar Silicon-Coupled Josephson Junctions with Recessed Electrode Structure},
year={1987},
volume={E70-E},
number={4},
pages={389-391},
abstract={Coplanar silicon-coupled bridge type Josephson junctions with recessed niobium electrode structure were fabricated with a new planarization process and Josephson current was observed for the device with an electrode spacing of 50 nm. This device structure has potential to a three-terminal supercouductive device controlled by an insulated gate.},
keywords={},
doi={},
ISSN={},
month={April},}
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TY - JOUR
TI - Coplanar Silicon-Coupled Josephson Junctions with Recessed Electrode Structure
T2 - IEICE TRANSACTIONS on transactions
SP - 389
EP - 391
AU - Mitsuru HIRAKI
AU - Takuo SUGANO
PY - 1987
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E70-E
IS - 4
JA - IEICE TRANSACTIONS on transactions
Y1 - April 1987
AB - Coplanar silicon-coupled bridge type Josephson junctions with recessed niobium electrode structure were fabricated with a new planarization process and Josephson current was observed for the device with an electrode spacing of 50 nm. This device structure has potential to a three-terminal supercouductive device controlled by an insulated gate.
ER -