Lateral Carrier Diffusion Effect in Parametric Modulation of Semiconductor Lasers
Summary :
The frequency response of parametric modulation of semiconductor lasers is given by taking the lateral carrier diffusion effect into account. It is confirmed that the carrier diffusion affects to flatten the resonance peak, and overall modulation response is not changed so much.
- Publication
- IEICE TRANSACTIONS on transactions Vol.E70-E No.5 pp.458-459
- Publication Date
- 1987/05/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- LETTER
- Category
- Optical and Quantum Electronics
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Kenichi IGA, Fumio KOYAMA, "Lateral Carrier Diffusion Effect in Parametric Modulation of Semiconductor Lasers" in IEICE TRANSACTIONS on transactions,
vol. E70-E, no. 5, pp. 458-459, May 1987, doi: .
Abstract: The frequency response of parametric modulation of semiconductor lasers is given by taking the lateral carrier diffusion effect into account. It is confirmed that the carrier diffusion affects to flatten the resonance peak, and overall modulation response is not changed so much.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e70-e_5_458/_p
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@ARTICLE{e70-e_5_458,
author={Kenichi IGA, Fumio KOYAMA, },
journal={IEICE TRANSACTIONS on transactions},
title={Lateral Carrier Diffusion Effect in Parametric Modulation of Semiconductor Lasers},
year={1987},
volume={E70-E},
number={5},
pages={458-459},
abstract={The frequency response of parametric modulation of semiconductor lasers is given by taking the lateral carrier diffusion effect into account. It is confirmed that the carrier diffusion affects to flatten the resonance peak, and overall modulation response is not changed so much.},
keywords={},
doi={},
ISSN={},
month={May},}
Copy
TY - JOUR
TI - Lateral Carrier Diffusion Effect in Parametric Modulation of Semiconductor Lasers
T2 - IEICE TRANSACTIONS on transactions
SP - 458
EP - 459
AU - Kenichi IGA
AU - Fumio KOYAMA
PY - 1987
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E70-E
IS - 5
JA - IEICE TRANSACTIONS on transactions
Y1 - May 1987
AB - The frequency response of parametric modulation of semiconductor lasers is given by taking the lateral carrier diffusion effect into account. It is confirmed that the carrier diffusion affects to flatten the resonance peak, and overall modulation response is not changed so much.
ER -
English
