IEICE TRANSACTIONS on transactions
1.5-1.6 µm GaInAsP/InP Bundle-Integrated-Guide (BIG) Distributed-Bragg-Reflector (DBR) Lasers
Summary :
Bundle-integrated-guide (BIG) structure distributed-Bragg-reflector (DBR) lasers based on 1.5-1.6 µm GaInAsP/InP system are presented. The significance of this structure is the suitability for the planar fabrication process of integrated optical devices, such as DBR lasers, which comprise active and passive waveguide regions. The BIG structure enables easier fabrication of buried hetero-structure (BH) of such an integrated waveguide device. High coupling efficiency between those waveguides of 95-99 percent is theoretically available with sufficiently large tolerance in thickness and composition of waveguide layers. Devices with different lengths of the active region, such as 200 µm, 100 µm and 50 µm, were fabricated and tested both for DC operation and rapid direct modulation. Threshold current as low as 28 mA and output power of 6.5 mW/facet were obtained for BH-BIG-DBR lasers with 100 µm long and 3 µm wide active region. Side-mode suppression ratio (SMSR) of more than 32 dB was obtained at the bias current of 1.2 times the threshold and it was not much degraded by rapid direct modulation.
- Publication
- IEICE TRANSACTIONS on transactions Vol.E70-E No.5 pp.494-503
- Publication Date
- 1987/05/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Optical and Quantum Electronics
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Yuichi TOHMORI, Kazuhiro KOMORI, Shigehisa ARAI, Yasuharu SUEMATSU, "1.5-1.6 µm GaInAsP/InP Bundle-Integrated-Guide (BIG) Distributed-Bragg-Reflector (DBR) Lasers" in IEICE TRANSACTIONS on transactions,
vol. E70-E, no. 5, pp. 494-503, May 1987, doi: .
Abstract: Bundle-integrated-guide (BIG) structure distributed-Bragg-reflector (DBR) lasers based on 1.5-1.6 µm GaInAsP/InP system are presented. The significance of this structure is the suitability for the planar fabrication process of integrated optical devices, such as DBR lasers, which comprise active and passive waveguide regions. The BIG structure enables easier fabrication of buried hetero-structure (BH) of such an integrated waveguide device. High coupling efficiency between those waveguides of 95-99 percent is theoretically available with sufficiently large tolerance in thickness and composition of waveguide layers. Devices with different lengths of the active region, such as 200 µm, 100 µm and 50 µm, were fabricated and tested both for DC operation and rapid direct modulation. Threshold current as low as 28 mA and output power of 6.5 mW/facet were obtained for BH-BIG-DBR lasers with 100 µm long and 3 µm wide active region. Side-mode suppression ratio (SMSR) of more than 32 dB was obtained at the bias current of 1.2 times the threshold and it was not much degraded by rapid direct modulation.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e70-e_5_494/_p
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@ARTICLE{e70-e_5_494,
author={Yuichi TOHMORI, Kazuhiro KOMORI, Shigehisa ARAI, Yasuharu SUEMATSU, },
journal={IEICE TRANSACTIONS on transactions},
title={1.5-1.6 µm GaInAsP/InP Bundle-Integrated-Guide (BIG) Distributed-Bragg-Reflector (DBR) Lasers},
year={1987},
volume={E70-E},
number={5},
pages={494-503},
abstract={Bundle-integrated-guide (BIG) structure distributed-Bragg-reflector (DBR) lasers based on 1.5-1.6 µm GaInAsP/InP system are presented. The significance of this structure is the suitability for the planar fabrication process of integrated optical devices, such as DBR lasers, which comprise active and passive waveguide regions. The BIG structure enables easier fabrication of buried hetero-structure (BH) of such an integrated waveguide device. High coupling efficiency between those waveguides of 95-99 percent is theoretically available with sufficiently large tolerance in thickness and composition of waveguide layers. Devices with different lengths of the active region, such as 200 µm, 100 µm and 50 µm, were fabricated and tested both for DC operation and rapid direct modulation. Threshold current as low as 28 mA and output power of 6.5 mW/facet were obtained for BH-BIG-DBR lasers with 100 µm long and 3 µm wide active region. Side-mode suppression ratio (SMSR) of more than 32 dB was obtained at the bias current of 1.2 times the threshold and it was not much degraded by rapid direct modulation.},
keywords={},
doi={},
ISSN={},
month={May},}
Copy
TY - JOUR
TI - 1.5-1.6 µm GaInAsP/InP Bundle-Integrated-Guide (BIG) Distributed-Bragg-Reflector (DBR) Lasers
T2 - IEICE TRANSACTIONS on transactions
SP - 494
EP - 503
AU - Yuichi TOHMORI
AU - Kazuhiro KOMORI
AU - Shigehisa ARAI
AU - Yasuharu SUEMATSU
PY - 1987
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E70-E
IS - 5
JA - IEICE TRANSACTIONS on transactions
Y1 - May 1987
AB - Bundle-integrated-guide (BIG) structure distributed-Bragg-reflector (DBR) lasers based on 1.5-1.6 µm GaInAsP/InP system are presented. The significance of this structure is the suitability for the planar fabrication process of integrated optical devices, such as DBR lasers, which comprise active and passive waveguide regions. The BIG structure enables easier fabrication of buried hetero-structure (BH) of such an integrated waveguide device. High coupling efficiency between those waveguides of 95-99 percent is theoretically available with sufficiently large tolerance in thickness and composition of waveguide layers. Devices with different lengths of the active region, such as 200 µm, 100 µm and 50 µm, were fabricated and tested both for DC operation and rapid direct modulation. Threshold current as low as 28 mA and output power of 6.5 mW/facet were obtained for BH-BIG-DBR lasers with 100 µm long and 3 µm wide active region. Side-mode suppression ratio (SMSR) of more than 32 dB was obtained at the bias current of 1.2 times the threshold and it was not much degraded by rapid direct modulation.
ER -
English
