Numerical Simulation of AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT's) with Various n--Collector Structures
Summary :
Numerical simulation of AlGaAs/GaAs HBT's with various n--collector structures are performed to study the cutoff frequency characteristics. A thinner n--layer with higher doping density is desirable to achieve higher cutoff frequency. Effects of the velocity overshoot are pronounced in a case with a thinner n--layer.
- Publication
- IEICE TRANSACTIONS on transactions Vol.E71-E No.10 pp.943-946
- Publication Date
- 1988/10/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section LETTER (Special Issue: Papers from 1988 Autumn Convention IEICE)
- Category
- Semiconductor Device
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Kazushige HORIO, Yasunori IWATSU, Hisayoshi YANAI, "Numerical Simulation of AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT's) with Various n--Collector Structures" in IEICE TRANSACTIONS on transactions,
vol. E71-E, no. 10, pp. 943-946, October 1988, doi: .
Abstract: Numerical simulation of AlGaAs/GaAs HBT's with various n--collector structures are performed to study the cutoff frequency characteristics. A thinner n--layer with higher doping density is desirable to achieve higher cutoff frequency. Effects of the velocity overshoot are pronounced in a case with a thinner n--layer.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e71-e_10_943/_p
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@ARTICLE{e71-e_10_943,
author={Kazushige HORIO, Yasunori IWATSU, Hisayoshi YANAI, },
journal={IEICE TRANSACTIONS on transactions},
title={Numerical Simulation of AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT's) with Various n--Collector Structures},
year={1988},
volume={E71-E},
number={10},
pages={943-946},
abstract={Numerical simulation of AlGaAs/GaAs HBT's with various n--collector structures are performed to study the cutoff frequency characteristics. A thinner n--layer with higher doping density is desirable to achieve higher cutoff frequency. Effects of the velocity overshoot are pronounced in a case with a thinner n--layer.},
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - Numerical Simulation of AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT's) with Various n--Collector Structures
T2 - IEICE TRANSACTIONS on transactions
SP - 943
EP - 946
AU - Kazushige HORIO
AU - Yasunori IWATSU
AU - Hisayoshi YANAI
PY - 1988
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E71-E
IS - 10
JA - IEICE TRANSACTIONS on transactions
Y1 - October 1988
AB - Numerical simulation of AlGaAs/GaAs HBT's with various n--collector structures are performed to study the cutoff frequency characteristics. A thinner n--layer with higher doping density is desirable to achieve higher cutoff frequency. Effects of the velocity overshoot are pronounced in a case with a thinner n--layer.
ER -
English
