Room Temperature CW Operation of GaAs Vertical Cavity Surface Emitting Laser

Fumio KOYAMA; Susumu KINOSHITA; Kenichi IGA

Room Temperature CW Operation of GaAs Vertical Cavity Surface Emitting Laser

Fumio KOYAMA, Susumu KINOSHITA, Kenichi IGA

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This is the first report on room temperature CW operation of GaAlAs/GaAs vertical Fabry-Perot cavity surface emitting lasers. A vertical microcavity was formed with a diameter of 7 µm and cavity length of 5.5 µm by a two-step MOCVD growth and fully monolithic technology. The threshold current was 32 mA under CW condition at 22.5. Stable single transverse and longitudinal mode operation was obtained.

Publication: IEICE TRANSACTIONS on transactions Vol.E71-E No.11 pp.1089-1090

Publication Date: 1988/11/25

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Type of Manuscript: LETTER

Category: Quantum Electronics

Authors

Fumio KOYAMA
Susumu KINOSHITA
Kenichi IGA

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Fumio KOYAMA, Susumu KINOSHITA, Kenichi IGA, "Room Temperature CW Operation of GaAs Vertical Cavity Surface Emitting Laser" in IEICE TRANSACTIONS on transactions, vol. E71-E, no. 11, pp. 1089-1090, November 1988, doi: .
Abstract: This is the first report on room temperature CW operation of GaAlAs/GaAs vertical Fabry-Perot cavity surface emitting lasers. A vertical microcavity was formed with a diameter of 7 µm and cavity length of 5.5 µm by a two-step MOCVD growth and fully monolithic technology. The threshold current was 32 mA under CW condition at 22.5. Stable single transverse and longitudinal mode operation was obtained.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e71-e_11_1089/_p

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@ARTICLE{e71-e_11_1089,
author={Fumio KOYAMA, Susumu KINOSHITA, Kenichi IGA, },
journal={IEICE TRANSACTIONS on transactions},
title={Room Temperature CW Operation of GaAs Vertical Cavity Surface Emitting Laser},
year={1988},
volume={E71-E},
number={11},
pages={1089-1090},
abstract={This is the first report on room temperature CW operation of GaAlAs/GaAs vertical Fabry-Perot cavity surface emitting lasers. A vertical microcavity was formed with a diameter of 7 µm and cavity length of 5.5 µm by a two-step MOCVD growth and fully monolithic technology. The threshold current was 32 mA under CW condition at 22.5. Stable single transverse and longitudinal mode operation was obtained.},
keywords={},
doi={},
ISSN={},
month={November},}

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TY - JOUR
TI - Room Temperature CW Operation of GaAs Vertical Cavity Surface Emitting Laser
T2 - IEICE TRANSACTIONS on transactions
SP - 1089
EP - 1090
AU - Fumio KOYAMA
AU - Susumu KINOSHITA
AU - Kenichi IGA
PY - 1988
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E71-E
IS - 11
JA - IEICE TRANSACTIONS on transactions
Y1 - November 1988
AB - This is the first report on room temperature CW operation of GaAlAs/GaAs vertical Fabry-Perot cavity surface emitting lasers. A vertical microcavity was formed with a diameter of 7 µm and cavity length of 5.5 µm by a two-step MOCVD growth and fully monolithic technology. The threshold current was 32 mA under CW condition at 22.5. Stable single transverse and longitudinal mode operation was obtained.
ER -