High Speed Tunnel Current Measurement (HSTCM) through Insulators and Its Application to Non-volatile Memory Devices

Toru KAGA; Takaaki HAGIWARA

High Speed Tunnel Current Measurement (HSTCM) through Insulators and Its Application to Non-volatile Memory Devices

Toru KAGA, Takaaki HAGIWARA

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A high speed tunnel current measurement technique called HSTCM has been proposed for characterizing insulating thin films. A voltage pulse (less than 100 µs) is applied across an insulator and a current pulse is measured using a specially devised operational amplifier. This technique enables measurement of high electric field current to voltage (I-V) characteristics of thin SiO₂ films in electric fields up to 2 GV/m, and to measure time dependent tunnel current characteristics in insulators, such as a Si₃N₄-SiO₂ two-layer insulator of an MNOS (Metal Nitride Oxide Semiconductor) device, in the 10 µs-1 ms range. Accurate high electric field I-V characteristics in thin SiO₂, and a capacitor coupled model for a floating gate non-volatile memory device could provide a high-precision simulation program for write/erase characteristics for the memory device. Furthermore, high speed time-dependent tunnel current measurement enables characterization of transient carrier trap phenomena in the insulator of the MNOS device in the µs range, i.e., the device's actual operation period. As described above, the HSTCM technique is a strong tool for evaluating tunneling phenomena in various insulating films and the operation of non-volatile memory devices.

Publication: IEICE TRANSACTIONS on transactions Vol.E71-E No.11 pp.1127-1133

Publication Date: 1988/11/25

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Type of Manuscript: PAPER

Category: Integrated Electronics

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Toru KAGA
Takaaki HAGIWARA

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Toru KAGA, Takaaki HAGIWARA, "High Speed Tunnel Current Measurement (HSTCM) through Insulators and Its Application to Non-volatile Memory Devices" in IEICE TRANSACTIONS on transactions, vol. E71-E, no. 11, pp. 1127-1133, November 1988, doi: .
Abstract: A high speed tunnel current measurement technique called HSTCM has been proposed for characterizing insulating thin films. A voltage pulse (less than 100 µs) is applied across an insulator and a current pulse is measured using a specially devised operational amplifier. This technique enables measurement of high electric field current to voltage (I-V) characteristics of thin SiO₂ films in electric fields up to 2 GV/m, and to measure time dependent tunnel current characteristics in insulators, such as a Si₃N₄-SiO₂ two-layer insulator of an MNOS (Metal Nitride Oxide Semiconductor) device, in the 10 µs-1 ms range. Accurate high electric field I-V characteristics in thin SiO₂, and a capacitor coupled model for a floating gate non-volatile memory device could provide a high-precision simulation program for write/erase characteristics for the memory device. Furthermore, high speed time-dependent tunnel current measurement enables characterization of transient carrier trap phenomena in the insulator of the MNOS device in the µs range, i.e., the device's actual operation period. As described above, the HSTCM technique is a strong tool for evaluating tunneling phenomena in various insulating films and the operation of non-volatile memory devices.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e71-e_11_1127/_p

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@ARTICLE{e71-e_11_1127,
author={Toru KAGA, Takaaki HAGIWARA, },
journal={IEICE TRANSACTIONS on transactions},
title={High Speed Tunnel Current Measurement (HSTCM) through Insulators and Its Application to Non-volatile Memory Devices},
year={1988},
volume={E71-E},
number={11},
pages={1127-1133},
abstract={A high speed tunnel current measurement technique called HSTCM has been proposed for characterizing insulating thin films. A voltage pulse (less than 100 µs) is applied across an insulator and a current pulse is measured using a specially devised operational amplifier. This technique enables measurement of high electric field current to voltage (I-V) characteristics of thin SiO₂ films in electric fields up to 2 GV/m, and to measure time dependent tunnel current characteristics in insulators, such as a Si₃N₄-SiO₂ two-layer insulator of an MNOS (Metal Nitride Oxide Semiconductor) device, in the 10 µs-1 ms range. Accurate high electric field I-V characteristics in thin SiO₂, and a capacitor coupled model for a floating gate non-volatile memory device could provide a high-precision simulation program for write/erase characteristics for the memory device. Furthermore, high speed time-dependent tunnel current measurement enables characterization of transient carrier trap phenomena in the insulator of the MNOS device in the µs range, i.e., the device's actual operation period. As described above, the HSTCM technique is a strong tool for evaluating tunneling phenomena in various insulating films and the operation of non-volatile memory devices.},
keywords={},
doi={},
ISSN={},
month={November},}

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TY - JOUR
TI - High Speed Tunnel Current Measurement (HSTCM) through Insulators and Its Application to Non-volatile Memory Devices
T2 - IEICE TRANSACTIONS on transactions
SP - 1127
EP - 1133
AU - Toru KAGA
AU - Takaaki HAGIWARA
PY - 1988
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E71-E
IS - 11
JA - IEICE TRANSACTIONS on transactions
Y1 - November 1988
AB - A high speed tunnel current measurement technique called HSTCM has been proposed for characterizing insulating thin films. A voltage pulse (less than 100 µs) is applied across an insulator and a current pulse is measured using a specially devised operational amplifier. This technique enables measurement of high electric field current to voltage (I-V) characteristics of thin SiO₂ films in electric fields up to 2 GV/m, and to measure time dependent tunnel current characteristics in insulators, such as a Si₃N₄-SiO₂ two-layer insulator of an MNOS (Metal Nitride Oxide Semiconductor) device, in the 10 µs-1 ms range. Accurate high electric field I-V characteristics in thin SiO₂, and a capacitor coupled model for a floating gate non-volatile memory device could provide a high-precision simulation program for write/erase characteristics for the memory device. Furthermore, high speed time-dependent tunnel current measurement enables characterization of transient carrier trap phenomena in the insulator of the MNOS device in the µs range, i.e., the device's actual operation period. As described above, the HSTCM technique is a strong tool for evaluating tunneling phenomena in various insulating films and the operation of non-volatile memory devices.
ER -