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Optical Nanosecond Memory Utilizing the Mode-Hopping Phenomenon of Semiconductor Laser

Hirokazu NAKAYAMA, Wakao SASAKI, Tatehisa OHTA

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Summary :

This letter reports the 10 ns (100 MHz) optoelectronic memory utilizing the mode-hopping phenomenon of a semiconductor laser. The hysteresis (wavelength bistability) features hold even at the speed of nanosecond. Some influences of VHF current modulation on mode-hopping are also measured.

Publication
IEICE TRANSACTIONS on transactions Vol.E71-E No.4 pp.337-339
Publication Date
1988/04/25
Publicized
Online ISSN
DOI
Type of Manuscript
Special Section LETTER (Special Issue: Papers from 1988 Spring Convention IEICE)
Category
Optoelectronics

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