IEICE TRANSACTIONS on transactions
Analysis of Threshold Current in GaAs-AlGaAs SCH Lasers--Effect of the Impurity Atoms in Optical Guiding Layers and Energy Gap Profiles of These Layers on the Threshold Current Density--
Summary :
The effects of impurity atoms and energy gap profiles in the optical guiding layers of GaAs-AlGaAs Separate Confinement Hetero (SCH) structure on the threshold current density are theoretically analyzed. Impurity doping in the optical guiding layers is not effective in reducing the threshold current, because impurity atoms induce non-effective current in those layers. The threshold current densities in three types of band gap profiles of the optical guiding layers are examined to find the most profitable structre of the SCH laser. Examined shapes of the profile are step, parabolic and linear types. The lowest threshold current densities calculated in each profile are almost identical if the design parameters such as the thickness of each layer and the alloy ratio are suitably chosen.
- Publication
- IEICE TRANSACTIONS on transactions Vol.E71-E No.7 pp.701-708
- Publication Date
- 1988/07/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Electro-Optics
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Minoru YAMADA, Masao GAMO, Yasumasa NASHIDA, "Analysis of Threshold Current in GaAs-AlGaAs SCH Lasers--Effect of the Impurity Atoms in Optical Guiding Layers and Energy Gap Profiles of These Layers on the Threshold Current Density--" in IEICE TRANSACTIONS on transactions,
vol. E71-E, no. 7, pp. 701-708, July 1988, doi: .
Abstract: The effects of impurity atoms and energy gap profiles in the optical guiding layers of GaAs-AlGaAs Separate Confinement Hetero (SCH) structure on the threshold current density are theoretically analyzed. Impurity doping in the optical guiding layers is not effective in reducing the threshold current, because impurity atoms induce non-effective current in those layers. The threshold current densities in three types of band gap profiles of the optical guiding layers are examined to find the most profitable structre of the SCH laser. Examined shapes of the profile are step, parabolic and linear types. The lowest threshold current densities calculated in each profile are almost identical if the design parameters such as the thickness of each layer and the alloy ratio are suitably chosen.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e71-e_7_701/_p
Copy
@ARTICLE{e71-e_7_701,
author={Minoru YAMADA, Masao GAMO, Yasumasa NASHIDA, },
journal={IEICE TRANSACTIONS on transactions},
title={Analysis of Threshold Current in GaAs-AlGaAs SCH Lasers--Effect of the Impurity Atoms in Optical Guiding Layers and Energy Gap Profiles of These Layers on the Threshold Current Density--},
year={1988},
volume={E71-E},
number={7},
pages={701-708},
abstract={The effects of impurity atoms and energy gap profiles in the optical guiding layers of GaAs-AlGaAs Separate Confinement Hetero (SCH) structure on the threshold current density are theoretically analyzed. Impurity doping in the optical guiding layers is not effective in reducing the threshold current, because impurity atoms induce non-effective current in those layers. The threshold current densities in three types of band gap profiles of the optical guiding layers are examined to find the most profitable structre of the SCH laser. Examined shapes of the profile are step, parabolic and linear types. The lowest threshold current densities calculated in each profile are almost identical if the design parameters such as the thickness of each layer and the alloy ratio are suitably chosen.},
keywords={},
doi={},
ISSN={},
month={July},}
Copy
TY - JOUR
TI - Analysis of Threshold Current in GaAs-AlGaAs SCH Lasers--Effect of the Impurity Atoms in Optical Guiding Layers and Energy Gap Profiles of These Layers on the Threshold Current Density--
T2 - IEICE TRANSACTIONS on transactions
SP - 701
EP - 708
AU - Minoru YAMADA
AU - Masao GAMO
AU - Yasumasa NASHIDA
PY - 1988
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E71-E
IS - 7
JA - IEICE TRANSACTIONS on transactions
Y1 - July 1988
AB - The effects of impurity atoms and energy gap profiles in the optical guiding layers of GaAs-AlGaAs Separate Confinement Hetero (SCH) structure on the threshold current density are theoretically analyzed. Impurity doping in the optical guiding layers is not effective in reducing the threshold current, because impurity atoms induce non-effective current in those layers. The threshold current densities in three types of band gap profiles of the optical guiding layers are examined to find the most profitable structre of the SCH laser. Examined shapes of the profile are step, parabolic and linear types. The lowest threshold current densities calculated in each profile are almost identical if the design parameters such as the thickness of each layer and the alloy ratio are suitably chosen.
ER -
English
