Modeling Thermal Properties of TO-5 Packages for Semiconductor Devices
Summary :
A thermal model of a TO-5 package in steady state has been derived. The model describes analytically the heat conduction, the heat transfer by free convection and the thermal radiation, taking account of a complicated structure of the package. It has been applied to a study on the negative dynamic resistance by self-heating which is observed in MOSFETs at high current level. The sublinear dependence of the temperature of the cap on the dissipated power in the MOSFETs are explained by the temperature dependence of the heat transfer by free convection.
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- IEICE TRANSACTIONS on transactions Vol.E71-E No.8 pp.784-790
- Publication Date
- 1988/08/25
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- PAPER
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- Components
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Yoshinori YAMADA, "Modeling Thermal Properties of TO-5 Packages for Semiconductor Devices" in IEICE TRANSACTIONS on transactions,
vol. E71-E, no. 8, pp. 784-790, August 1988, doi: .
Abstract: A thermal model of a TO-5 package in steady state has been derived. The model describes analytically the heat conduction, the heat transfer by free convection and the thermal radiation, taking account of a complicated structure of the package. It has been applied to a study on the negative dynamic resistance by self-heating which is observed in MOSFETs at high current level. The sublinear dependence of the temperature of the cap on the dissipated power in the MOSFETs are explained by the temperature dependence of the heat transfer by free convection.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e71-e_8_784/_p
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@ARTICLE{e71-e_8_784,
author={Yoshinori YAMADA, },
journal={IEICE TRANSACTIONS on transactions},
title={Modeling Thermal Properties of TO-5 Packages for Semiconductor Devices},
year={1988},
volume={E71-E},
number={8},
pages={784-790},
abstract={A thermal model of a TO-5 package in steady state has been derived. The model describes analytically the heat conduction, the heat transfer by free convection and the thermal radiation, taking account of a complicated structure of the package. It has been applied to a study on the negative dynamic resistance by self-heating which is observed in MOSFETs at high current level. The sublinear dependence of the temperature of the cap on the dissipated power in the MOSFETs are explained by the temperature dependence of the heat transfer by free convection.},
keywords={},
doi={},
ISSN={},
month={August},}
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TY - JOUR
TI - Modeling Thermal Properties of TO-5 Packages for Semiconductor Devices
T2 - IEICE TRANSACTIONS on transactions
SP - 784
EP - 790
AU - Yoshinori YAMADA
PY - 1988
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E71-E
IS - 8
JA - IEICE TRANSACTIONS on transactions
Y1 - August 1988
AB - A thermal model of a TO-5 package in steady state has been derived. The model describes analytically the heat conduction, the heat transfer by free convection and the thermal radiation, taking account of a complicated structure of the package. It has been applied to a study on the negative dynamic resistance by self-heating which is observed in MOSFETs at high current level. The sublinear dependence of the temperature of the cap on the dissipated power in the MOSFETs are explained by the temperature dependence of the heat transfer by free convection.
ER -
English
