Transverse Mode Characteristics of 1.3µm GaInAsP/InP Buried Crescent Lasers by the Use of a Reactive Ion Beam Etching Process

Akihiko KASUKAWA; Masayuki IWASE; Narihito MATSUMOTO; Toshihiko MAKINO; Susumu KASHIWA

Transverse Mode Characteristics of 1.3µm GaInAsP/InP Buried Crescent Lasers by the Use of a Reactive Ion Beam Etching Process

Akihiko KASUKAWA, Masayuki IWASE, Narihito MATSUMOTO, Toshihiko MAKINO, Susumu KASHIWA

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Transverse mode characteristics of a high power 1.3µm GaInAsP/InP buried crescent laser by the use of a dry etching process is described. With this technique, a single transverse mode (STM) yield as high as 95% was achieved. Transverse mode stability was confirmed after 1000 h aging at 50, 20 mW. A coupling efficiency into a single mode fiber as high as 63% was obtained.

Publication: IEICE TRANSACTIONS on transactions Vol.E71-E No.9 pp.837-839

Publication Date: 1988/09/25

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Type of Manuscript: LETTER

Category: Quantum Electronics

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Akihiko KASUKAWA
Masayuki IWASE
Narihito MATSUMOTO
Toshihiko MAKINO
Susumu KASHIWA

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Akihiko KASUKAWA, Masayuki IWASE, Narihito MATSUMOTO, Toshihiko MAKINO, Susumu KASHIWA, "Transverse Mode Characteristics of 1.3µm GaInAsP/InP Buried Crescent Lasers by the Use of a Reactive Ion Beam Etching Process" in IEICE TRANSACTIONS on transactions, vol. E71-E, no. 9, pp. 837-839, September 1988, doi: .
Abstract: Transverse mode characteristics of a high power 1.3µm GaInAsP/InP buried crescent laser by the use of a dry etching process is described. With this technique, a single transverse mode (STM) yield as high as 95% was achieved. Transverse mode stability was confirmed after 1000 h aging at 50, 20 mW. A coupling efficiency into a single mode fiber as high as 63% was obtained.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e71-e_9_837/_p

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@ARTICLE{e71-e_9_837,
author={Akihiko KASUKAWA, Masayuki IWASE, Narihito MATSUMOTO, Toshihiko MAKINO, Susumu KASHIWA, },
journal={IEICE TRANSACTIONS on transactions},
title={Transverse Mode Characteristics of 1.3µm GaInAsP/InP Buried Crescent Lasers by the Use of a Reactive Ion Beam Etching Process},
year={1988},
volume={E71-E},
number={9},
pages={837-839},
abstract={Transverse mode characteristics of a high power 1.3µm GaInAsP/InP buried crescent laser by the use of a dry etching process is described. With this technique, a single transverse mode (STM) yield as high as 95% was achieved. Transverse mode stability was confirmed after 1000 h aging at 50, 20 mW. A coupling efficiency into a single mode fiber as high as 63% was obtained.},
keywords={},
doi={},
ISSN={},
month={September},}

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TY - JOUR
TI - Transverse Mode Characteristics of 1.3µm GaInAsP/InP Buried Crescent Lasers by the Use of a Reactive Ion Beam Etching Process
T2 - IEICE TRANSACTIONS on transactions
SP - 837
EP - 839
AU - Akihiko KASUKAWA
AU - Masayuki IWASE
AU - Narihito MATSUMOTO
AU - Toshihiko MAKINO
AU - Susumu KASHIWA
PY - 1988
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E71-E
IS - 9
JA - IEICE TRANSACTIONS on transactions
Y1 - September 1988
AB - Transverse mode characteristics of a high power 1.3µm GaInAsP/InP buried crescent laser by the use of a dry etching process is described. With this technique, a single transverse mode (STM) yield as high as 95% was achieved. Transverse mode stability was confirmed after 1000 h aging at 50, 20 mW. A coupling efficiency into a single mode fiber as high as 63% was obtained.
ER -