IEICE TRANSACTIONS on transactions
Low-Noise 2-GHz-Band VCO Implementation for Frequency Synthesizers Used in Land Mobile Radio
Summary :
A low-noise 2-GHz-band VCO for frequency synthesizers used in mobile/portable radio sets is designed and implemented. This frequency band has become increasingly important for mobile/portable radio to alleviate the present frequency congestion problem below 1 GHz. So far, however, low noise VCOs which satisfy the severe requirements of mobile radio systems operating above 1 GHz have not been investigated. The design specifications are summarized, and it is shown that the VCO phase noise reduction requires a rigorous designed oscillator. Oscillator noise characteristics are reviewed, and design principles are clarified. In order to suppress the 1/f noise, a Clapp oscillator circuit and a microstrip resonator are adopted. A Si BJT and GaAs MES FET are compared under optimum bias conditions. The noise level of the Si BJT oscillator is 13 dB less than to that of the GaAs MES FET at a 25-kHz offset frequency from the oscillation frequency, and was thus adopted in our VCO implementation. The following performance levels were obtained: 28 MHz variable frequency range with control voltage from 1 to 5 volts,
- Publication
- IEICE TRANSACTIONS on transactions Vol.E72-E No.10 pp.1111-1118
- Publication Date
- 1989/10/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Radio Communication
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Yoshiaki TARUSAWA, Hiroshi SUZUKI, "Low-Noise 2-GHz-Band VCO Implementation for Frequency Synthesizers Used in Land Mobile Radio" in IEICE TRANSACTIONS on transactions,
vol. E72-E, no. 10, pp. 1111-1118, October 1989, doi: .
Abstract: A low-noise 2-GHz-band VCO for frequency synthesizers used in mobile/portable radio sets is designed and implemented. This frequency band has become increasingly important for mobile/portable radio to alleviate the present frequency congestion problem below 1 GHz. So far, however, low noise VCOs which satisfy the severe requirements of mobile radio systems operating above 1 GHz have not been investigated. The design specifications are summarized, and it is shown that the VCO phase noise reduction requires a rigorous designed oscillator. Oscillator noise characteristics are reviewed, and design principles are clarified. In order to suppress the 1/f noise, a Clapp oscillator circuit and a microstrip resonator are adopted. A Si BJT and GaAs MES FET are compared under optimum bias conditions. The noise level of the Si BJT oscillator is 13 dB less than to that of the GaAs MES FET at a 25-kHz offset frequency from the oscillation frequency, and was thus adopted in our VCO implementation. The following performance levels were obtained: 28 MHz variable frequency range with control voltage from 1 to 5 volts,
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e72-e_10_1111/_p
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@ARTICLE{e72-e_10_1111,
author={Yoshiaki TARUSAWA, Hiroshi SUZUKI, },
journal={IEICE TRANSACTIONS on transactions},
title={Low-Noise 2-GHz-Band VCO Implementation for Frequency Synthesizers Used in Land Mobile Radio},
year={1989},
volume={E72-E},
number={10},
pages={1111-1118},
abstract={A low-noise 2-GHz-band VCO for frequency synthesizers used in mobile/portable radio sets is designed and implemented. This frequency band has become increasingly important for mobile/portable radio to alleviate the present frequency congestion problem below 1 GHz. So far, however, low noise VCOs which satisfy the severe requirements of mobile radio systems operating above 1 GHz have not been investigated. The design specifications are summarized, and it is shown that the VCO phase noise reduction requires a rigorous designed oscillator. Oscillator noise characteristics are reviewed, and design principles are clarified. In order to suppress the 1/f noise, a Clapp oscillator circuit and a microstrip resonator are adopted. A Si BJT and GaAs MES FET are compared under optimum bias conditions. The noise level of the Si BJT oscillator is 13 dB less than to that of the GaAs MES FET at a 25-kHz offset frequency from the oscillation frequency, and was thus adopted in our VCO implementation. The following performance levels were obtained: 28 MHz variable frequency range with control voltage from 1 to 5 volts,
keywords={},
doi={},
ISSN={},
month={October},}
Copy
TY - JOUR
TI - Low-Noise 2-GHz-Band VCO Implementation for Frequency Synthesizers Used in Land Mobile Radio
T2 - IEICE TRANSACTIONS on transactions
SP - 1111
EP - 1118
AU - Yoshiaki TARUSAWA
AU - Hiroshi SUZUKI
PY - 1989
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E72-E
IS - 10
JA - IEICE TRANSACTIONS on transactions
Y1 - October 1989
AB - A low-noise 2-GHz-band VCO for frequency synthesizers used in mobile/portable radio sets is designed and implemented. This frequency band has become increasingly important for mobile/portable radio to alleviate the present frequency congestion problem below 1 GHz. So far, however, low noise VCOs which satisfy the severe requirements of mobile radio systems operating above 1 GHz have not been investigated. The design specifications are summarized, and it is shown that the VCO phase noise reduction requires a rigorous designed oscillator. Oscillator noise characteristics are reviewed, and design principles are clarified. In order to suppress the 1/f noise, a Clapp oscillator circuit and a microstrip resonator are adopted. A Si BJT and GaAs MES FET are compared under optimum bias conditions. The noise level of the Si BJT oscillator is 13 dB less than to that of the GaAs MES FET at a 25-kHz offset frequency from the oscillation frequency, and was thus adopted in our VCO implementation. The following performance levels were obtained: 28 MHz variable frequency range with control voltage from 1 to 5 volts,
ER -
English
