Field Induced Refractive Index Variation in Quantum Box Structure for Intersectional Optical Switch

Katsuaki MATSUBARA; K.G. RAVIKUMAR; Masahiro ASADA; Yasuharu SUEMATSU

IEICE TRANSACTIONS on transactions

Field Induced Refractive Index Variation in Quantum Box Structure for Intersectional Optical Switch

Katsuaki MATSUBARA, K.G. RAVIKUMAR, Masahiro ASADA, Yasuharu SUEMATSU

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Field induced refractive index variation and the ratio of index to loss variations _p' which is an important parameter deciding the loss characteristics of an intersectional optical switch, was analyzed for GaInAs/InP quantum box structure. We found that large index variation and large | _p| value(10) with low fundamental absorption, which are required for low insertion loss switch(1 dB), can be attained. Further the usable wavelength range for low loss switching operation is shown to be around 8 nm.

Publication: IEICE TRANSACTIONS on transactions Vol.E72-E No.11 pp.1179-1181

Publication Date: 1989/11/25

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Type of Manuscript: LETTER

Category: Quantum Electronics

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Katsuaki MATSUBARA
K.G. RAVIKUMAR
Masahiro ASADA
Yasuharu SUEMATSU

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Katsuaki MATSUBARA, K.G. RAVIKUMAR, Masahiro ASADA, Yasuharu SUEMATSU, "Field Induced Refractive Index Variation in Quantum Box Structure for Intersectional Optical Switch" in IEICE TRANSACTIONS on transactions, vol. E72-E, no. 11, pp. 1179-1181, November 1989, doi: .
Abstract: Field induced refractive index variation and the ratio of index to loss variations _p' which is an important parameter deciding the loss characteristics of an intersectional optical switch, was analyzed for GaInAs/InP quantum box structure. We found that large index variation and large | _p| value(10) with low fundamental absorption, which are required for low insertion loss switch(1 dB), can be attained. Further the usable wavelength range for low loss switching operation is shown to be around 8 nm.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e72-e_11_1179/_p

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@ARTICLE{e72-e_11_1179,
author={Katsuaki MATSUBARA, K.G. RAVIKUMAR, Masahiro ASADA, Yasuharu SUEMATSU, },
journal={IEICE TRANSACTIONS on transactions},
title={Field Induced Refractive Index Variation in Quantum Box Structure for Intersectional Optical Switch},
year={1989},
volume={E72-E},
number={11},
pages={1179-1181},
abstract={Field induced refractive index variation and the ratio of index to loss variations _p' which is an important parameter deciding the loss characteristics of an intersectional optical switch, was analyzed for GaInAs/InP quantum box structure. We found that large index variation and large | _p| value(10) with low fundamental absorption, which are required for low insertion loss switch(1 dB), can be attained. Further the usable wavelength range for low loss switching operation is shown to be around 8 nm.},
keywords={},
doi={},
ISSN={},
month={November},}

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TY - JOUR
TI - Field Induced Refractive Index Variation in Quantum Box Structure for Intersectional Optical Switch
T2 - IEICE TRANSACTIONS on transactions
SP - 1179
EP - 1181
AU - Katsuaki MATSUBARA
AU - K.G. RAVIKUMAR
AU - Masahiro ASADA
AU - Yasuharu SUEMATSU
PY - 1989
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E72-E
IS - 11
JA - IEICE TRANSACTIONS on transactions
Y1 - November 1989
AB - Field induced refractive index variation and the ratio of index to loss variations _p' which is an important parameter deciding the loss characteristics of an intersectional optical switch, was analyzed for GaInAs/InP quantum box structure. We found that large index variation and large | _p| value(10) with low fundamental absorption, which are required for low insertion loss switch(1 dB), can be attained. Further the usable wavelength range for low loss switching operation is shown to be around 8 nm.
ER -

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Field Induced Refractive Index Variation in Quantum Box Structure for Intersectional Optical Switch

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Field Induced Refractive Index Variation in Quantum Box Structure for Intersectional Optical Switch

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