Numerical Analysis of GaAs MESFET's with Deep Acceptors 
Cr" in the Semi-insulating Substrate
Summary :
Numerical simulations of GaAs MESFET's with deep acceptors Cr in the substrate are made for the first time. Acceptors are found to play an important role in determining I-V curves, whether they are shallow or deep. To minimize short-channnel effects, the acceptor density in the substrate must be high.
- Publication
- IEICE TRANSACTIONS on transactions Vol.E72-E No.4 pp.303-306
- Publication Date
- 1989/04/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section LETTER (Special Issue on 1989 Spring National Convention IEICE)
- Category
- Electronic Devices
Authors
Keyword
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Kazushige HORIO, Kazuhiro ASADA, Hisayoshi YANAI, "Numerical Analysis of GaAs MESFET's with Deep Acceptors Cr" in the Semi-insulating Substrate" in IEICE TRANSACTIONS on transactions,
vol. E72-E, no. 4, pp. 303-306, April 1989, doi: .
Abstract: Numerical simulations of GaAs MESFET's with deep acceptors Cr in the substrate are made for the first time. Acceptors are found to play an important role in determining I-V curves, whether they are shallow or deep. To minimize short-channnel effects, the acceptor density in the substrate must be high.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e72-e_4_303/_p
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@ARTICLE{e72-e_4_303,
author={Kazushige HORIO, Kazuhiro ASADA, Hisayoshi YANAI, },
journal={IEICE TRANSACTIONS on transactions},
title={Numerical Analysis of GaAs MESFET's with Deep Acceptors Cr" in the Semi-insulating Substrate},
year={1989},
volume={E72-E},
number={4},
pages={303-306},
abstract={Numerical simulations of GaAs MESFET's with deep acceptors Cr in the substrate are made for the first time. Acceptors are found to play an important role in determining I-V curves, whether they are shallow or deep. To minimize short-channnel effects, the acceptor density in the substrate must be high.},
keywords={},
doi={},
ISSN={},
month={April},}
Copy
TY - JOUR
TI - Numerical Analysis of GaAs MESFET's with Deep Acceptors Cr" in the Semi-insulating Substrate
T2 - IEICE TRANSACTIONS on transactions
SP - 303
EP - 306
AU - Kazushige HORIO
AU - Kazuhiro ASADA
AU - Hisayoshi YANAI
PY - 1989
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E72-E
IS - 4
JA - IEICE TRANSACTIONS on transactions
Y1 - April 1989
AB - Numerical simulations of GaAs MESFET's with deep acceptors Cr in the substrate are made for the first time. Acceptors are found to play an important role in determining I-V curves, whether they are shallow or deep. To minimize short-channnel effects, the acceptor density in the substrate must be high.
ER -
English
