IEICE TRANSACTIONS on transactions
An Analytical Simulation of P-AlGaAs/InGaAs/GaAs Pseudomorphic FET
Summary :
Possibility of high performance P-channel HEMT was investigated. P-channel HEMT structure with an InGaAs strained layer was fabricated and yielded a measured hole mobility of 260-310 cm2/Vs. Numerical simulations based on the experimental results indicate an expected transconductance of 186 mS/mm for the intrinsic part and 82 mS/mm for the extrinsic part (source resistance of 6 Ωmm) for 0.1/µm gate HEMTs.
- Publication
- IEICE TRANSACTIONS on transactions Vol.E73-E No.11 pp.1849-1851
- Publication Date
- 1990/11/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section LETTER (Special Issue on 1990 Autumn Natl. Conv. IEICE)
- Category
- Electronic Devices
Authors
Keyword
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Takuma TANIMOTO, Masao YAMANE, Shigeo GOTO, Yoko UCHIDA, "An Analytical Simulation of P-AlGaAs/InGaAs/GaAs Pseudomorphic FET" in IEICE TRANSACTIONS on transactions,
vol. E73-E, no. 11, pp. 1849-1851, November 1990, doi: .
Abstract: Possibility of high performance P-channel HEMT was investigated. P-channel HEMT structure with an InGaAs strained layer was fabricated and yielded a measured hole mobility of 260-310 cm2/Vs. Numerical simulations based on the experimental results indicate an expected transconductance of 186 mS/mm for the intrinsic part and 82 mS/mm for the extrinsic part (source resistance of 6 Ωmm) for 0.1/µm gate HEMTs.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e73-e_11_1849/_p
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@ARTICLE{e73-e_11_1849,
author={Takuma TANIMOTO, Masao YAMANE, Shigeo GOTO, Yoko UCHIDA, },
journal={IEICE TRANSACTIONS on transactions},
title={An Analytical Simulation of P-AlGaAs/InGaAs/GaAs Pseudomorphic FET},
year={1990},
volume={E73-E},
number={11},
pages={1849-1851},
abstract={Possibility of high performance P-channel HEMT was investigated. P-channel HEMT structure with an InGaAs strained layer was fabricated and yielded a measured hole mobility of 260-310 cm2/Vs. Numerical simulations based on the experimental results indicate an expected transconductance of 186 mS/mm for the intrinsic part and 82 mS/mm for the extrinsic part (source resistance of 6 Ωmm) for 0.1/µm gate HEMTs.},
keywords={},
doi={},
ISSN={},
month={November},}
Copy
TY - JOUR
TI - An Analytical Simulation of P-AlGaAs/InGaAs/GaAs Pseudomorphic FET
T2 - IEICE TRANSACTIONS on transactions
SP - 1849
EP - 1851
AU - Takuma TANIMOTO
AU - Masao YAMANE
AU - Shigeo GOTO
AU - Yoko UCHIDA
PY - 1990
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E73-E
IS - 11
JA - IEICE TRANSACTIONS on transactions
Y1 - November 1990
AB - Possibility of high performance P-channel HEMT was investigated. P-channel HEMT structure with an InGaAs strained layer was fabricated and yielded a measured hole mobility of 260-310 cm2/Vs. Numerical simulations based on the experimental results indicate an expected transconductance of 186 mS/mm for the intrinsic part and 82 mS/mm for the extrinsic part (source resistance of 6 Ωmm) for 0.1/µm gate HEMTs.
ER -
English
