Effect of Well Number in 1.3 µm GaInAsP Graded-Index Separate-Confinement-Heterostructure Multiple-Quantum-Well (GRIN-SCH-MQW) Laser Diodes
Summary :
The effect of well number in 1.3 µm GaInAsP Graded-Index Separate-Confinement-Heterostructure Multiple-Quantum-Well (GRIN-SCH-MQW) laser diodes (LDs) is examined experimentally in terms of threshold current density Jth, differential quantum efficiency ηd and internal loss α. For LDs with cavity length L of 270 µm, Jth as low as 0.9 KA/cm2 was obtained with 5 quantum wells. ηd as high as 81% and α as low as 5 cm-1 were obtained with 4 quantum wells. Taking these parameters into account, 4 or 5 is calulated to be the optimum number of quantum wells for the present structure, which was confirmed experimentally. Light output power of 56 mW/facet with a narrow and circular output beam was obtained in a buried heterostructure (BH) GRIN-SCH-MQW LD entirely grown by Metalorganic Chemical Vapor Deposition (MOCVD). These results indicate that the use of a GRIN-SCH in a MQW LD of the GaInAsP/InP system is effective in the improvement of laser characteristics.
- Publication
- IEICE TRANSACTIONS on transactions Vol.E73-E No.1 pp.59-62
- Publication Date
- 1990/01/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on International Conference on Integrated Optics and Optical Fiber Communication)
- Category
- Optical Semiconductor Devices and OEICs
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Akihiko KASUKAWA, Yoshihiro IMAJO, Ian John MURGATROYD, Hiroshi OKAMOTO, "Effect of Well Number in 1.3 µm GaInAsP Graded-Index Separate-Confinement-Heterostructure Multiple-Quantum-Well (GRIN-SCH-MQW) Laser Diodes" in IEICE TRANSACTIONS on transactions,
vol. E73-E, no. 1, pp. 59-62, January 1990, doi: .
Abstract: The effect of well number in 1.3 µm GaInAsP Graded-Index Separate-Confinement-Heterostructure Multiple-Quantum-Well (GRIN-SCH-MQW) laser diodes (LDs) is examined experimentally in terms of threshold current density Jth, differential quantum efficiency ηd and internal loss α. For LDs with cavity length L of 270 µm, Jth as low as 0.9 KA/cm2 was obtained with 5 quantum wells. ηd as high as 81% and α as low as 5 cm-1 were obtained with 4 quantum wells. Taking these parameters into account, 4 or 5 is calulated to be the optimum number of quantum wells for the present structure, which was confirmed experimentally. Light output power of 56 mW/facet with a narrow and circular output beam was obtained in a buried heterostructure (BH) GRIN-SCH-MQW LD entirely grown by Metalorganic Chemical Vapor Deposition (MOCVD). These results indicate that the use of a GRIN-SCH in a MQW LD of the GaInAsP/InP system is effective in the improvement of laser characteristics.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e73-e_1_59/_p
Copy
@ARTICLE{e73-e_1_59,
author={Akihiko KASUKAWA, Yoshihiro IMAJO, Ian John MURGATROYD, Hiroshi OKAMOTO, },
journal={IEICE TRANSACTIONS on transactions},
title={Effect of Well Number in 1.3 µm GaInAsP Graded-Index Separate-Confinement-Heterostructure Multiple-Quantum-Well (GRIN-SCH-MQW) Laser Diodes},
year={1990},
volume={E73-E},
number={1},
pages={59-62},
abstract={The effect of well number in 1.3 µm GaInAsP Graded-Index Separate-Confinement-Heterostructure Multiple-Quantum-Well (GRIN-SCH-MQW) laser diodes (LDs) is examined experimentally in terms of threshold current density Jth, differential quantum efficiency ηd and internal loss α. For LDs with cavity length L of 270 µm, Jth as low as 0.9 KA/cm2 was obtained with 5 quantum wells. ηd as high as 81% and α as low as 5 cm-1 were obtained with 4 quantum wells. Taking these parameters into account, 4 or 5 is calulated to be the optimum number of quantum wells for the present structure, which was confirmed experimentally. Light output power of 56 mW/facet with a narrow and circular output beam was obtained in a buried heterostructure (BH) GRIN-SCH-MQW LD entirely grown by Metalorganic Chemical Vapor Deposition (MOCVD). These results indicate that the use of a GRIN-SCH in a MQW LD of the GaInAsP/InP system is effective in the improvement of laser characteristics.},
keywords={},
doi={},
ISSN={},
month={January},}
Copy
TY - JOUR
TI - Effect of Well Number in 1.3 µm GaInAsP Graded-Index Separate-Confinement-Heterostructure Multiple-Quantum-Well (GRIN-SCH-MQW) Laser Diodes
T2 - IEICE TRANSACTIONS on transactions
SP - 59
EP - 62
AU - Akihiko KASUKAWA
AU - Yoshihiro IMAJO
AU - Ian John MURGATROYD
AU - Hiroshi OKAMOTO
PY - 1990
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E73-E
IS - 1
JA - IEICE TRANSACTIONS on transactions
Y1 - January 1990
AB - The effect of well number in 1.3 µm GaInAsP Graded-Index Separate-Confinement-Heterostructure Multiple-Quantum-Well (GRIN-SCH-MQW) laser diodes (LDs) is examined experimentally in terms of threshold current density Jth, differential quantum efficiency ηd and internal loss α. For LDs with cavity length L of 270 µm, Jth as low as 0.9 KA/cm2 was obtained with 5 quantum wells. ηd as high as 81% and α as low as 5 cm-1 were obtained with 4 quantum wells. Taking these parameters into account, 4 or 5 is calulated to be the optimum number of quantum wells for the present structure, which was confirmed experimentally. Light output power of 56 mW/facet with a narrow and circular output beam was obtained in a buried heterostructure (BH) GRIN-SCH-MQW LD entirely grown by Metalorganic Chemical Vapor Deposition (MOCVD). These results indicate that the use of a GRIN-SCH in a MQW LD of the GaInAsP/InP system is effective in the improvement of laser characteristics.
ER -
English
