IEICE TRANSACTIONS on transactions
Permissible Optical Input Power in a Semiconductor Optical Switch/Modulator Using Electric Field Effect
Summary :
The permissible optical input power of a semiconductor optical switch/modulator for maintaining high performances was derived by taking account of reduction of internal electric field due to absorption-induced photo-current. It was found that the extinction ratio degrades with the increase of absorbed optical power. The permissible optical input power, at which the extinction ratio decreases 3 dB, was found to be higher than 20 mW for reflection type optical switch/modulator.
- Publication
- IEICE TRANSACTIONS on transactions Vol.E73-E No.4 pp.491-493
- Publication Date
- 1990/04/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section LETTER (Special Issue on 1990 Spring National Convention IEICE)
- Category
- Optoelectronics and Quantum Electronics
Authors
Keyword
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Kazuhiko SHIMOMURA, Masahiro ASADA, Shigehisa ARAI, "Permissible Optical Input Power in a Semiconductor Optical Switch/Modulator Using Electric Field Effect" in IEICE TRANSACTIONS on transactions,
vol. E73-E, no. 4, pp. 491-493, April 1990, doi: .
Abstract: The permissible optical input power of a semiconductor optical switch/modulator for maintaining high performances was derived by taking account of reduction of internal electric field due to absorption-induced photo-current. It was found that the extinction ratio degrades with the increase of absorbed optical power. The permissible optical input power, at which the extinction ratio decreases 3 dB, was found to be higher than 20 mW for reflection type optical switch/modulator.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e73-e_4_491/_p
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@ARTICLE{e73-e_4_491,
author={Kazuhiko SHIMOMURA, Masahiro ASADA, Shigehisa ARAI, },
journal={IEICE TRANSACTIONS on transactions},
title={Permissible Optical Input Power in a Semiconductor Optical Switch/Modulator Using Electric Field Effect},
year={1990},
volume={E73-E},
number={4},
pages={491-493},
abstract={The permissible optical input power of a semiconductor optical switch/modulator for maintaining high performances was derived by taking account of reduction of internal electric field due to absorption-induced photo-current. It was found that the extinction ratio degrades with the increase of absorbed optical power. The permissible optical input power, at which the extinction ratio decreases 3 dB, was found to be higher than 20 mW for reflection type optical switch/modulator.},
keywords={},
doi={},
ISSN={},
month={April},}
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TY - JOUR
TI - Permissible Optical Input Power in a Semiconductor Optical Switch/Modulator Using Electric Field Effect
T2 - IEICE TRANSACTIONS on transactions
SP - 491
EP - 493
AU - Kazuhiko SHIMOMURA
AU - Masahiro ASADA
AU - Shigehisa ARAI
PY - 1990
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E73-E
IS - 4
JA - IEICE TRANSACTIONS on transactions
Y1 - April 1990
AB - The permissible optical input power of a semiconductor optical switch/modulator for maintaining high performances was derived by taking account of reduction of internal electric field due to absorption-induced photo-current. It was found that the extinction ratio degrades with the increase of absorbed optical power. The permissible optical input power, at which the extinction ratio decreases 3 dB, was found to be higher than 20 mW for reflection type optical switch/modulator.
ER -
English
