One-Carrier Numerical Model for GaAs MESFET's (with p-Buffer Layer) on the Semi-Insulating Substrate Including Deep Levels
Summary :
A simplified two-dimensional model that includes only an electron current equation is shown to be successfully applied to the calculation of current-voltage characteristics of GaAs MESFET's with a p-beffer layer or with the semi-insulating substrate including hole traps.
- Publication
- IEICE TRANSACTIONS on transactions Vol.E73-E No.4 pp.506-509
- Publication Date
- 1990/04/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section LETTER (Special Issue on 1990 Spring National Convention IEICE)
- Category
- Electronic Devices
Authors
Keyword
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Kazushige HORIO, Yasuji FUSEYA, Hiroyuki KUSUKI, Hisayoshi YANAI, "One-Carrier Numerical Model for GaAs MESFET's (with p-Buffer Layer) on the Semi-Insulating Substrate Including Deep Levels" in IEICE TRANSACTIONS on transactions,
vol. E73-E, no. 4, pp. 506-509, April 1990, doi: .
Abstract: A simplified two-dimensional model that includes only an electron current equation is shown to be successfully applied to the calculation of current-voltage characteristics of GaAs MESFET's with a p-beffer layer or with the semi-insulating substrate including hole traps.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e73-e_4_506/_p
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@ARTICLE{e73-e_4_506,
author={Kazushige HORIO, Yasuji FUSEYA, Hiroyuki KUSUKI, Hisayoshi YANAI, },
journal={IEICE TRANSACTIONS on transactions},
title={One-Carrier Numerical Model for GaAs MESFET's (with p-Buffer Layer) on the Semi-Insulating Substrate Including Deep Levels},
year={1990},
volume={E73-E},
number={4},
pages={506-509},
abstract={A simplified two-dimensional model that includes only an electron current equation is shown to be successfully applied to the calculation of current-voltage characteristics of GaAs MESFET's with a p-beffer layer or with the semi-insulating substrate including hole traps.},
keywords={},
doi={},
ISSN={},
month={April},}
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TY - JOUR
TI - One-Carrier Numerical Model for GaAs MESFET's (with p-Buffer Layer) on the Semi-Insulating Substrate Including Deep Levels
T2 - IEICE TRANSACTIONS on transactions
SP - 506
EP - 509
AU - Kazushige HORIO
AU - Yasuji FUSEYA
AU - Hiroyuki KUSUKI
AU - Hisayoshi YANAI
PY - 1990
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E73-E
IS - 4
JA - IEICE TRANSACTIONS on transactions
Y1 - April 1990
AB - A simplified two-dimensional model that includes only an electron current equation is shown to be successfully applied to the calculation of current-voltage characteristics of GaAs MESFET's with a p-beffer layer or with the semi-insulating substrate including hole traps.
ER -
English
