A Linearity Improvement of Switched Resistors by a Drain-to-Gate Feedback

Sumio FUKAI; Hirobumi ISHIKAWA

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Sumio FUKAI, Hirobumi ISHIKAWA, "A Linearity Improvement of Switched Resistors by a Drain-to-Gate Feedback" in IEICE TRANSACTIONS on transactions, vol. E73-E, no. 5, pp. 679-680, May 1990, doi: .
Abstract: The linearity of the drain-current versus drain-to-source voltage characteristics of MOSFETs used in switched resistor (SR) circuits is improved by adding a drain-to-gate feedback. When a feedback factor is larger than 0.5, an equivalent resistor with low distortion and wide voltage range is realized.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e73-e_5_679/_p

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@ARTICLE{e73-e_5_679,
author={Sumio FUKAI, Hirobumi ISHIKAWA, },
journal={IEICE TRANSACTIONS on transactions},
title={A Linearity Improvement of Switched Resistors by a Drain-to-Gate Feedback},
year={1990},
volume={E73-E},
number={5},
pages={679-680},
abstract={The linearity of the drain-current versus drain-to-source voltage characteristics of MOSFETs used in switched resistor (SR) circuits is improved by adding a drain-to-gate feedback. When a feedback factor is larger than 0.5, an equivalent resistor with low distortion and wide voltage range is realized.},
keywords={},
doi={},
ISSN={},
month={May},}

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TY - JOUR
TI - A Linearity Improvement of Switched Resistors by a Drain-to-Gate Feedback
T2 - IEICE TRANSACTIONS on transactions
SP - 679
EP - 680
AU - Sumio FUKAI
AU - Hirobumi ISHIKAWA
PY - 1990
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E73-E
IS - 5
JA - IEICE TRANSACTIONS on transactions
Y1 - May 1990
AB - The linearity of the drain-current versus drain-to-source voltage characteristics of MOSFETs used in switched resistor (SR) circuits is improved by adding a drain-to-gate feedback. When a feedback factor is larger than 0.5, an equivalent resistor with low distortion and wide voltage range is realized.
ER -